VanGennep D, Linscheid A, Jackson D E, Weir S T, Vohra Y K, Berger H, Stewart G R, Hennig R G, Hirschfeld P J, Hamlin J J
Department of Physics, University of Florida, Gainesville, FL 32611, United States of America.
J Phys Condens Matter. 2017 Mar 8;29(9):09LT02. doi: 10.1088/1361-648X/aa5567. Epub 2016 Dec 22.
At ambient pressure, BiTeI exhibits a giant Rashba splitting of the bulk electronic bands. At low pressures, BiTeI undergoes a transition from trivial insulator to topological insulator. At still higher pressures, two structural transitions are known to occur. We have carried out a series of electrical resistivity and AC magnetic susceptibility measurements on BiTeI at pressure up to ∼40 GPa in an effort to characterize the properties of the high-pressure phases. A previous calculation found that the high-pressure orthorhombic P4/nmm structure BiTeI is a metal. We find that this structure is superconducting with T values as high as 6 K. AC magnetic susceptibility measurements support the bulk nature of the superconductivity. Using electronic structure and phonon calculations, we compute T and find that our data is consistent with phonon-mediated superconductivity.
在常压下,BiTeI呈现出体电子能带的巨大Rashba分裂。在低压下,BiTeI经历从平凡绝缘体到拓扑绝缘体的转变。在更高的压力下,已知会发生两次结构转变。我们对BiTeI在高达约40 GPa的压力下进行了一系列电阻率和交流磁化率测量,以表征高压相的性质。先前的计算发现高压正交P4/nmm结构的BiTeI是一种金属。我们发现这种结构是超导的,超导转变温度T值高达6 K。交流磁化率测量支持了超导的体性质。通过电子结构和声子计算,我们计算了T,并发现我们的数据与声子介导的超导性一致。