InAs 纳米线中从负光电导到本征光电响应的转变。
Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire.
机构信息
Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.
出版信息
ACS Appl Mater Interfaces. 2017 Jan 25;9(3):2867-2874. doi: 10.1021/acsami.6b13775. Epub 2017 Jan 12.
Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal-organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.
在金属有机化学气相沉积生长的相同的单个 InAs 纳米线中观察到了负光电导（NPC）和正光电导（PPC）。NPC 在弱光照射下表现出来，这是由于本征氧化层中的热载流子被光激发散射中心所带电荷导致的。而 PPC 则是在高光强下观察到的。通过去除本征氧化层并用 HfO 钝化纳米线，我们消除了 NPC 效应，并实现了 InAs 纳米线的本征光电响应。
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