Physical Chemistry and Center for Advancing Electronics Dresden (cfAED), TU Dresden , Bergstr. 66b, Dresden 01062, Germany.
Semiconductor Physics, TU Chemnitz , Chemnitz D-09107, Germany.
ACS Nano. 2017 Feb 28;11(2):1559-1571. doi: 10.1021/acsnano.6b06996. Epub 2017 Jan 18.
We report on a simple and effective technique of tuning the colloidal solubility of inorganic-capped CdSe and CdSe/CdS core/shell nanocrystals (NCs) from highly polar to nonpolar media using n-butylamine molecules. The introduction of the short and volatile organic amine mainly results in a modification of the labile diffusion region of the inorganic-capped NCs, enabling a significant extension of their dispersibility and improving the ability to form long-range assemblies. Moreover, the hybrid n-butylamine/inorganic capping can be thermally decomposed under mild heat treatment, making this approach of surface functionalization well-compatible with a low-temperature, solution-processed device fabrication. Particularly, a field-effect transistor-based on n-butylamine/Ga-I-complex-capped 4.5 nm CdSe NC solids shows excellent transport characteristics with electron mobilities up to 2 cm/(V·s) and a high current modulation value (>10) at a low operation voltage (<2 V).
我们报告了一种简单而有效的技术,使用正丁胺分子将无机帽层 CdSe 和 CdSe/CdS 核/壳纳米晶体(NCs)的胶体溶解度从高极性调至非极性介质。短而易挥发的有机胺的引入主要导致了无机帽 NCs 的不稳定扩散区域的修饰,从而显著扩展了它们的分散性并提高了形成长程组装的能力。此外,混合的正丁胺/无机帽可以在温和的热处理下热分解,使得这种表面功能化方法与低温溶液处理器件制造非常兼容。特别是,基于正丁胺/ Ga-I 配合物帽 4.5nmCdSeNC 固体的场效应晶体管表现出优异的输运特性,电子迁移率高达 2cm/(V·s),在低操作电压(<2V)下具有高电流调制值(>10)。