Chen Chih-Ying, Cheng Chih-Hao, Lin Fan-Yi
Opt Express. 2016 Dec 26;24(26):30537-30546. doi: 10.1364/OE.24.030537.
We studied single-sideband (SSB) photonic microwave generation with a high sideband rejection ratio (SRR) based on the period-one dynamical states of an optically injected quantum-dot (QD) semiconductor laser and demonstrated that the SSB signals have SRRs of approximately 15 dB higher than those generated with a conventional quantum-well semiconductor laser under conditions of optimal microwave power. The enhancement of SRR in the QD laser, which is important in mitigating the power penalty effect in applications such as radio-over-fiber optical communications, could be primarily attributed to a lower carrier decay rate in the dots, smaller linewidth enhancement factor, and reduced photon decay rate.
我们基于光注入量子点（QD）半导体激光器的周期一动态状态，研究了具有高边带抑制比（SRR）的单边带（SSB）光子微波产生，并证明在最佳微波功率条件下，SSB信号的SRR比传统量子阱半导体激光器产生的信号高出约15 dB。量子点激光器中SRR的提高，这在减轻诸如光纤无线光通信等应用中的功率代价效应方面很重要，主要可归因于量子点中较低的载流子衰减率、较小的线宽增强因子以及降低的光子衰减率。
