State Key Laboratory of Information Photonics and Optical Communications and School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, P. R. China.
State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University , Beijing 100871, P. R. China.
ACS Appl Mater Interfaces. 2017 Feb 1;9(4):3959-3966. doi: 10.1021/acsami.6b14699. Epub 2017 Jan 23.
Experimental two-dimensional (2D) black phosphorus (BP) transistors typically appear in the form of Schottky barrier field effect transistors (SBFETs), but their performance limit remains open. We investigate the performance limit of monolayer BP SBFETs in the sub-10 nm scale by using ab initio quantum transport simulations. The devices with 2D graphene electrodes are apparently superior to those with bulk Ti electrodes due to their smaller and tunable Schottky barrier heights and the absence of metal induced gap states in the channels. With graphene electrodes, the performance limit of the sub-10 nm monolayer BP SBFETs outperforms the monolayer MoS, carbon nanotube, and advanced silicon transistors and even can meet the requirements of both high performance and low power logic applications of the next decade in the latest International Technology Roadmap for Semiconductors. It appears that the ML BP SBFETs have the best intrinsic device performance among the reported sub-10 nm 2D material SBFETs.
实验性二维 (2D) 黑磷 (BP) 晶体管通常以肖特基势垒场效应晶体管 (SBFET) 的形式出现，但它们的性能极限仍未确定。我们通过使用从头算量子输运模拟来研究亚 10nm 尺度下单层 BP SBFET 的性能极限。由于其肖特基势垒高度较小且可调，以及沟道中不存在金属诱导的能隙态，因此具有 2D 石墨烯电极的器件明显优于具有块状 Ti 电极的器件。使用石墨烯电极，亚 10nm 单层 BP SBFET 的性能极限优于单层 MoS、碳纳米管和先进的硅晶体管，甚至可以满足最新国际半导体技术路线图中未来十年高性能和低功耗逻辑应用的要求。在报道的亚 10nm 2D 材料 SBFET 中，ML BP SBFET 似乎具有最佳的固有器件性能。
