Materials Science and Technology Division, National Institute for Interdisciplinary Science and Technology, CSIR, Trivandrum 695019, India.
Microelectronics Research Unit, Faculty of Information Technology and Electrical Engineering, University of Oulu, 90014, Finland.
Sci Rep. 2017 Jan 13;7:40839. doi: 10.1038/srep40839.
Alumina, thanks to its superior thermal and dielectric properties, has been the leading substrate over several decades, for power and microelectronics circuits. However, alumina lacks thermal stability since its temperature coefficient of resonant frequency (τ) is far from zero (-60 ppmK). The present paper explores the potentiality of a ceramic composite 0.83ZnAlO-0.17TiO (in moles, abbreviated as ZAT) substrates for electronic applications over other commercially-used alumina-based substrates and synthesized using a non-aqueous tape casting method. The present substrate has τ of + 3.9 ppmK and is a valuable addition to the group of thermo-stable substrates. The ZAT substrate shows a high thermal conductivity of 31.3 WmK (thermal conductivity of alumina is about 24.5 WmK), along with promising mechanical, electrical and microwave dielectric properties comparable to that of alumina-based commercial substrates. Furthermore, the newly-developed substrate material shows exceptionally good thermal stability of dielectric constant, which cannot be met with any of the alumina-based HTCC substrates.
氧化铝凭借其优越的热学和介电性能，在过去几十年中一直是电力和微电子电路的主要基板。然而，氧化铝缺乏热稳定性，因为其谐振频率温度系数（τ）远非零（-60ppmK）。本文探讨了陶瓷复合材料 0.83ZnAlO-0.17TiO（摩尔分数，简写为 ZAT）基板在电子应用方面相对于其他商业用氧化铝基基板的潜力，并采用非水基带式铸造法进行了合成。本基板的 τ 为+3.9ppmK，是热稳定基板组的一个有价值的补充。ZAT 基板表现出 31.3WmK 的高热导率（氧化铝的热导率约为 24.5WmK），同时还具有有前途的机械、电气和微波介电性能，可与氧化铝基商业基板相媲美。此外，新开发的基板材料在介电常数的热稳定性方面表现异常出色，这是任何氧化铝基 HTCC 基板都无法满足的。
