Graduate Institute of Electro-Optical Engineering and Department of Electronic and Computer Engineering, National Taiwan University of Science and Technology , Taipei 106, Taiwan, ROC.
Department of Physics, Tamkang University , Tamsui 251, Taiwan, ROC.
ACS Appl Mater Interfaces. 2017 Feb 8;9(5):4916-4925. doi: 10.1021/acsami.6b12375. Epub 2017 Jan 24.
High-performance diamond electron field emitters (EFEs) with extremely low turn-on field (E = 1.72 V/μm) and high current density (1.70 mA/cm at an applied field of 3.86 V/μm) were successfully synthesized by using a modified two-step microwave plasma chemical deposition process. Such emitters possess EFE properties comparable with most of carbon- or semiconductor-based EFE materials, but with markedly better lifetime stability. The superb EFE behavior of these materials was achieved owing to the reduction in the diamond-to-Si interfacial resistance and the increase in the conductivity of the bulk diamond films (HBD) via the applications of high bias voltage during the preparation of the ultrananocrystalline diamond (UNCD) primary layer and the subsequent plasma post-treatment (PPT) process, respectively. The superior EFE properties along with enhanced robustness of HBD films compared with the existing diamond-based EFE materials rendered these materials of greater potential for applications in high brightness display and multifunctional microplasma.
采用改进的两步微波等离子体化学沉积工艺，成功合成了具有极低开启场（E=1.72 V/μm）和高电流密度（在 3.86 V/μm 的外加场下为 1.70 mA/cm）的高性能金刚石电子场发射器（EFE）。这种发射器具有与大多数基于碳或半导体的 EFE 材料相当的 EFE 特性，但寿命稳定性明显更好。这些材料具有出色的 EFE 性能，这是由于在制备超细晶金刚石（UNCD）初级层和随后的等离子体后处理（PPT）过程中应用高偏压，分别降低了金刚石与 Si 界面的电阻和增加了体金刚石薄膜（HBD）的电导率。与现有的基于金刚石的 EFE 材料相比，HBD 薄膜具有优异的 EFE 性能和增强的鲁棒性，这使得它们在高亮度显示和多功能微等离子体中的应用具有更大的潜力。
