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Hopping charge transport in amorphous semiconductors with the spatially correlated exponential density of states.

作者信息

Novikov S V

机构信息

A.N. Frumkin Institute of Physical Chemistry and Electrochemistry, Leninsky prosp. 31, Moscow 119071, Russia.

出版信息

J Chem Phys. 2017 Jan 14;146(2):024504. doi: 10.1063/1.4973824.

DOI:10.1063/1.4973824
PMID:28088147
Abstract

Hopping charge transport in amorphous semiconductors having spatially correlated exponential density of states has been considered. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. We suggest also a heuristic approach for the consideration of the carrier velocity for the non-equilibrium dispersive regime.

摘要

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