铟镓砷/铟铝砷雪崩光电二极管的优化

Optimization of InGaAs/InAlAs Avalanche Photodiodes.

作者信息

Chen Jun, Zhang Zhengyu, Zhu Min, Xu Jintong, Li Xiangyang

机构信息

School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, China.

Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.

出版信息

Nanoscale Res Lett. 2017 Dec;12(1):33. doi: 10.1186/s11671-016-1815-9. Epub 2017 Jan 13.

DOI:10.1186/s11671-016-1815-9

PMID:28091945

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5236056/

Abstract

In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.

摘要

在本文中，我们报道了对铟镓砷/铟铝砷分离吸收、渐变、电荷和倍增雪崩光电二极管（SAGCM APD）的二维（2D）模拟，并研究了电荷层和倍增层对APD工作电压范围的影响。我们发现，随着电荷层和倍增层的厚度以及掺杂浓度的增加，穿通电压升高；随着两层的掺杂浓度以及电荷层厚度的增加，击穿电压降低；随着倍增层厚度的增加，击穿电压先迅速下降然后略有上升。