Department of Materials Science and Engineering, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, ROC.
Department of Physics, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, ROC.
Adv Mater. 2017 Feb;29(8). doi: 10.1002/adma.201601575. Epub 2017 Jan 18.
By engineering multidomain formation in Co/Pt multilayers, it is demonstrated how multilevel storage can be achieved by spin-orbit torque switching. It is rather remarkable that, by modulating the writing pulse conditions, the final magnetization states can be controlled, independent of the initial configurations. The initialization-free multilevel memory advances the spin-orbit-torque magnetic random access memory to higher storage density for practical applications.
通过在 Co/Pt 多层膜中进行多畴形成工程，本文展示了如何通过自旋轨道扭矩切换实现多级存储。值得注意的是，通过调制写入脉冲条件，可以独立于初始状态来控制最终的磁化状态。这种无需初始化的多级存储器将自旋轨道扭矩磁随机存储器推进到更高的存储密度，以满足实际应用的需求。
