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通过遗传算法分子模拟对吸附等温线进行可靠预测。

Reliable prediction of adsorption isotherms via genetic algorithm molecular simulation.

作者信息

LoftiKatooli L, Shahsavand A

机构信息

Chemical Engineering Department, Ferdowsi university of Mashhad, Mashhad, Iran.

出版信息

J Mol Model. 2017 Jan;23(1):33. doi: 10.1007/s00894-017-3206-2. Epub 2017 Jan 19.

Abstract

Conventional molecular simulation techniques such as grand canonical Monte Carlo (GCMC) strictly rely on purely random search inside the simulation box for predicting the adsorption isotherms. This blind search is usually extremely time demanding for providing a faithful approximation of the real isotherm and in some cases may lead to non-optimal solutions. A novel approach is presented in this article which does not use any of the classical steps of the standard GCMC method, such as displacement, insertation, and removal. The new approach is based on the well-known genetic algorithm to find the optimal configuration for adsorption of any adsorbate on a structured adsorbent under prevailing pressure and temperature. The proposed approach considers the molecular simulation problem as a global optimization challenge. A detailed flow chart of our so-called genetic algorithm molecular simulation (GAMS) method is presented, which is entirely different from traditions molecular simulation approaches. Three real case studies (for adsorption of CO and H over various zeolites) are borrowed from literature to clearly illustrate the superior performances of the proposed method over the standard GCMC technique. For the present method, the average absolute values of percentage errors are around 11% (RHO-H), 5% (CHA-CO), and 16% (BEA-CO), while they were about 70%, 15%, and 40% for the standard GCMC technique, respectively.

摘要

传统的分子模拟技术,如巨正则蒙特卡罗(GCMC)方法,在预测吸附等温线时,严格依赖于在模拟盒内进行纯粹的随机搜索。这种盲目搜索通常需要耗费大量时间才能提供对真实等温线的可靠近似,并且在某些情况下可能会导致非最优解。本文提出了一种新颖的方法,该方法不使用标准GCMC方法的任何经典步骤,如位移、插入和移除。新方法基于著名的遗传算法,以找到在当前压力和温度下,任何吸附质在结构化吸附剂上吸附的最优构型。所提出的方法将分子模拟问题视为一个全局优化挑战。文中给出了我们所谓的遗传算法分子模拟(GAMS)方法的详细流程图,它与传统的分子模拟方法完全不同。从文献中借用了三个实际案例研究(关于CO和H在各种沸石上的吸附),以清楚地说明所提出的方法相对于标准GCMC技术的优越性能。对于本方法,百分比误差的平均绝对值约为11%(RHO - H)、5%(CHA - CO)和16%(BEA - CO),而对于标准GCMC技术,这些值分别约为70%、15%和40%。

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