Alhussein Akram, Achache Sofiane, Deturche Regis, Sanchette Frederic, Pulgarin Cesar, Kiwi John, Rtimi Sami
ICD-LASMIS, Université de Technologie de Troyes, UMR 6281, CNRS, Antenne de Nogent, Pôle Technologique de Haute-Champagne, 52800 Nogent, France; Nogent International Center for CVD Innovation, LRC CEA-ICD-LASMIS, UTT, Antenne de Nogent, Pôle Technologique de Haute-Champagne, 52800 Nogent, France.
ICD-LASMIS, Université de Technologie de Troyes, UMR 6281, CNRS, Antenne de Nogent, Pôle Technologique de Haute-Champagne, 52800 Nogent, France; Nogent International Center for CVD Innovation, LRC CEA-ICD-LASMIS, UTT, Antenne de Nogent, Pôle Technologique de Haute-Champagne, 52800 Nogent, France.
Colloids Surf B Biointerfaces. 2017 Apr 1;152:152-158. doi: 10.1016/j.colsurfb.2017.01.020. Epub 2017 Jan 15.
This article presents the evidence for the significant effect of copper accelerating the bacterial inactivation on Ti-Nb-Ta-Zr (TNTZ) sputtered films on glass up to a Cu content of 8.3 at.%. These films were deposited by dc magnetron co-sputtering of an alloy target Ti-23Nb-0.7Ta-2Zr (at.%) and a Cu target. The fastest bacterial inactivation of E. coli on this later TNTZ-Cu surface proceeded within ∼75min. The films deposited by magnetron sputtering are chemically homogenous. The film roughness evaluated by atomic force spectroscopy (AFM) on the TNTZ-Cu 8.3 at.% Cu sample presented an RMS-value of 20.1nm being the highest RMS of any Cu-sputtered TNTZ sample. The implication of the RMS value found for this sample leading to the fastest interfacial bacterial inactivation kinetics is also discussed. Values for the Young's modulus and hardness are reported for the TNTZ films in the presence of various Cu-contents. Evaluation of the bacterial inactivation kinetics of E. coli under low intensity actinic hospital light and in the dark was carried out. The stable repetitive bacterial inactivation was consistent with the extremely low Cu-ion release from the samples of 0.4 ppb. Evidence is presented by the bacterial inactivation dependence on the applied light intensity for the intervention of Cu as semiconductor CuO during the bacterial inactivation at the TNTZ-Cu interface. The mechanism of CuO-intervention under light is suggested based on the pH/and potential changes registered during bacterial disinfection.
本文给出了证据，证明在玻璃上的Ti-Nb-Ta-Zr（TNTZ）溅射薄膜中，铜含量高达8.3原子百分比时，铜对细菌灭活具有显著的加速作用。这些薄膜是通过直流磁控共溅射合金靶Ti-23Nb-0.7Ta-2Zr（原子百分比）和铜靶沉积而成的。在这种TNTZ-Cu表面上，大肠杆菌的最快细菌灭活过程在约75分钟内完成。通过磁控溅射沉积的薄膜在化学上是均匀的。用原子力光谱（AFM）对TNTZ-Cu 8.3原子百分比铜样品进行的薄膜粗糙度评估显示，均方根值为20.1nm，是所有溅射铜的TNTZ样品中最高的均方根值。还讨论了该样品的均方根值导致最快的界面细菌灭活动力学的含义。报告了不同铜含量下TNTZ薄膜的杨氏模量和硬度值。对大肠杆菌在低强度光化医院光和黑暗条件下的细菌灭活动力学进行了评估。稳定的重复细菌灭活与样品中极低的0.4 ppb铜离子释放一致。通过细菌灭活对施加光强度的依赖性，给出了在TNTZ-Cu界面细菌灭活过程中铜作为半导体CuO参与的证据。基于细菌消毒过程中记录的pH值和电位变化，提出了光下CuO参与的机制。
