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一种具有与α-CdTeO相关结构的新型β-CdTeO多晶型物。

A new β-CdTeO polymorph with a structure related to α-CdTeO.

作者信息

Poupon Morgane, Barrier Nicolas, Petit Sébastien, Boudin Sophie

机构信息

Laboratoire CRISMAT, UMR 6508 CNRS ENCAEN, 6 bd Maréchal Juin, 14050 CAEN Cedex 4, France.

出版信息

Dalton Trans. 2017 Feb 14;46(6):1927-1935. doi: 10.1039/c6dt04449b.

DOI:10.1039/c6dt04449b
PMID:28112302
Abstract

A new β-CdTeO polymorph was obtained by hydrothermal synthesis and its structure was solved ab initio from powder X-ray diffraction data. It appears that the structure of β-CdTeO (Pnma, Z = 16, a = 7.45850(3) Å, b = 14.52185(6) Å, c = 11.04584(5) Å) is closely related to that of α-CdTeO (P2/c, Z = 8, a = 7.790(1) Å, b = 11.253(2) Å, c = 7.418(1) Å, β = 113.5(1)°) previously reported. The 3D framework of β-CdTeO is built of both [CdO] distorted octahedra and [CdO] mono-capped trigonal prisms and three different tellurium polyhedra: trigonal pyramids [TeOE] and trigonal bipyramids [TeOE] and [TeOE] (E denotes the lone pair of Te). The electronic structure calculations based on density functional theory methods show that at the ground state α-CdTeO is slightly more stable than β-CdTeO with an energy difference of 4.64 kJ mol. The band structures confirm the results of optical UV-Vis spectroscopy measurements: both polymorphs are wide bandgap semiconductors with E = 3.55 eV for β-CdTeO and E = 3.91 eV for α-CdTeO. The DOS calculations for both polymorphs enable one to understand that the presence of the [TeOE] polyhedra in β-CdTeO (absent in α-CdTeO) lowers its bandgap. Above 540 °C β-CdTeO transforms into α-CdTeO in a first order phase transition.

摘要

通过水热合成法获得了一种新型β-CdTeO多晶型物,并根据粉末X射线衍射数据从头算解析了其结构。β-CdTeO(Pnma,Z = 16,a = 7.45850(3) Å,b = 14.52185(6) Å,c = 11.04584(5) Å)的结构似乎与先前报道的α-CdTeO(P2/c,Z = 8,a = 7.790(1) Å,b = 11.253(2) Å,c = 7.418(1) Å,β = 113.5(1)°)密切相关。β-CdTeO的三维骨架由扭曲的[CdO]八面体和[CdO]单帽三角棱柱以及三种不同的碲多面体构成:三角锥[TeOE]、三角双锥[TeOE]和[TeOE](E表示碲的孤对电子)。基于密度泛函理论方法的电子结构计算表明,在基态下α-CdTeO比β-CdTeO略稳定,能量差为4.64 kJ/mol。能带结构证实了紫外-可见光谱测量的结果:两种多晶型物均为宽带隙半导体,β-CdTeO的E = 3.55 eV,α-CdTeO的E = 3.91 eV。两种多晶型物的态密度计算使人们能够理解,β-CdTeO中[TeOE]多面体(α-CdTeO中不存在)的存在降低了其带隙。在540℃以上,β-CdTeO以一级相变转变为α-CdTeO。

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