宽带脉冲激发的非激子成分对 GaAs/AlAs 多量子阱中量子拍频的影响。

Effects of non-exciton components excited by broadband pulses on quantum beats in a GaAs/AlAs multiple quantum well.

机构信息

Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501, Japan.

National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan.

出版信息

Sci Rep. 2017 Jan 27;7:41496. doi: 10.1038/srep41496.

DOI:10.1038/srep41496

PMID:28128344

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5269727/

Abstract

In this study, we report the effect of the excitation of non-exciton components caused by broadband pulses on quantum beat oscillation. Using a spectrally controlled pump pulse, a long-lived oscillation is clearly observed, and the pump-power dependence shows the suppression of the dephasing rate of the oscillation. Our results from incoherent carrier generation using a continuous wave laser demonstrate that the non-exciton components behaving as free carriers increase the oscillation dephasing rate.

摘要

在这项研究中，我们报告了宽带脉冲引起的非激子成分激发对量子拍频振荡的影响。使用光谱控制的泵浦脉冲，可以清楚地观察到长寿命的振荡，并且泵浦功率依赖性表明了振荡的退相速率的抑制。我们使用连续波激光进行非相干载流子产生的结果表明，表现为自由载流子的非激子成分增加了振荡的退相速率。