Borri P, Langbein W, Woggon U, Schwab M, Bayer M, Fafard S, Wasilewski Z, Hawrylak P
Experimentelle Physik II, Universität Dortmund, Otto-Hahn Strasse 4, D-44227 Dortmund, Germany.
Phys Rev Lett. 2003 Dec 31;91(26 Pt 1):267401. doi: 10.1103/PhysRevLett.91.267401. Epub 2003 Dec 23.
We have measured the exciton dephasing time in InAs/GaAs quantum dot molecules having different interdot barrier thicknesses in the temperature range from 5 to 60 K, using a highly sensitive four-wave mixing heterodyne technique. At 5 K dephasing times of several hundred picoseconds are found. Moreover, a systematic dependence of the dephasing dynamics on the barrier thickness is observed. These results show how the quantum-mechanical coupling of the electronic wave functions in the molecules affects both the exciton radiative lifetime and the exciton-acoustic phonon interaction.
我们使用高灵敏度四波混频外差技术，在5至60K的温度范围内测量了具有不同点间势垒厚度的InAs/GaAs量子点分子中的激子退相时间。在5K时发现退相时间为几百皮秒。此外，还观察到退相动力学对势垒厚度的系统性依赖。这些结果表明分子中电子波函数的量子力学耦合如何影响激子辐射寿命和激子-声子相互作用。
