Key Laboratory of Optical System Advanced Manufacturing Technology, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China.
University of the Chinese Academy of Sciences, Beijing 100039, China.
Sci Rep. 2017 Feb 16;7:42750. doi: 10.1038/srep42750.
A large area and broadband ultra-black absorber based on microstructured aluminum (Al) doped silicon (Si) films prepared by a low-cost but very effective approach is presented. The average absorption of the absorber is greater than 99% within the wide range from 350 nm to 2000 nm, and its size reaches to 6 inches. We investigate the fabrication mechanism of the absorber and find that the Al atom doped in silicon improves the formation of the nanocone-like microstructures on the film surface, resulting in a significant decrease in the reflection of incident light. The absorption mechanism is further discussed by experiments and simulated calculations in detail. The results show that the doped Al atoms and Mie resonance formed in the microstructures contribute the broadband super-high absorption.
提出了一种基于微结构铝（Al）掺杂硅（Si）薄膜的大面积、宽带超黑吸收体，该薄膜采用低成本但非常有效的方法制备。该吸收体在从 350nm 到 2000nm 的宽范围内的平均吸收率大于 99%，其尺寸达到 6 英寸。我们研究了吸收体的制备机制，发现硅中的 Al 原子促进了纳米锥状微结构在薄膜表面的形成，从而显著降低了入射光的反射。通过实验和模拟计算详细讨论了吸收机制。结果表明，掺杂的 Al 原子和微结构中形成的米氏共振导致了宽带超高吸收。
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