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一款适用于单光子飞行时间正电子发射断层扫描(PET)应用的2.5毫瓦/通道、50兆码片每秒、10通道、具有自适应偏置的读出前端集成电路,在90纳米互补金属氧化物半导体(CMOS)工艺中具有低固有定时分辨率,并进行了时变噪声分析 。

A 2.5 mW/ch, 50 Mcps, 10-Analog Channel, Adaptively Biased Read-Out Front-End IC With Low Intrinsic Timing Resolution for Single-Photon Time-of-Flight PET Applications With Time-Dependent Noise Analysis in 90 nm CMOS.

作者信息

Cruz Hugo, Huang Hong-Yi, Luo Ching-Hsing, Lee Shuenn-Yuh

出版信息

IEEE Trans Biomed Circuits Syst. 2017 Apr;11(2):287-299. doi: 10.1109/TBCAS.2016.2623738. Epub 2017 Feb 13.

Abstract

This paper presents a 10-channel time-of-flight application-specific integrated circuit (ASIC) for positron emission tomography in a 90 nm standard CMOS process. To overcome variations in channel-to-channel timing resolution caused by mismatch and process variations, adaptive biases and a digital-to-analog converter (DAC) are utilized. The main contributions of this work are as follows. First, multistage architectures reduce the total power consumption, and detection bandwidths of analog preamplifiers and comparators are increased to 1 and 1.5 GHz, respectively, relative to those in previous studies. Second, a total intrinsic electronic timing resolution of 9.71 ps root-mean-square (RMS) is achieved (13.88 ps peak and 11.8 ps average of the 10 channels in 5 ASICs). Third, the proposed architecture reduces variations in channel-to-channel timing resolution to 2.6 bits (equivalent to 4.17 ps RMS) by calibrating analog comparator threshold levels. A 181.5 ps full-width-at-half-maximum timing resolution is measured with an avalanche photo diode and a laser setup. The power consumption is 2.5 mW using 0.5 and 1.2 V power supplies. The proposed ASIC is implemented in a 90 nm TSMC CMOS process with a total area of 3.3 mm × 2.7 mm.

摘要

本文介绍了一款采用90纳米标准互补金属氧化物半导体(CMOS)工艺制造的用于正电子发射断层扫描的10通道飞行时间专用集成电路(ASIC)。为克服由失配和工艺变化导致的通道间定时分辨率差异,采用了自适应偏置和数模转换器(DAC)。这项工作的主要贡献如下。首先,多级架构降低了总功耗,与先前研究相比,模拟前置放大器和比较器的检测带宽分别提高到了1吉赫兹和1.5吉赫兹。其次,实现了9.71皮秒均方根(RMS)的总固有电子定时分辨率(5个ASIC中10个通道的峰值为13.88皮秒,平均值为11.8皮秒)。第三,通过校准模拟比较器阈值电平,所提出的架构将通道间定时分辨率的差异降低到了2.6比特(相当于4.17皮秒RMS)。使用雪崩光电二极管和激光装置测量得到181.5皮秒半高宽定时分辨率。使用0.5伏和1.2伏电源时功耗为2.5毫瓦。所提出的ASIC采用台积电90纳米CMOS工艺实现,总面积为3.3毫米×2.7毫米。

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