Solid State Physics, Lund University, Box 118, Lund 22100, Sweden.
Nanoscale. 2017 Mar 2;9(9):3159-3168. doi: 10.1039/c6nr09477e.
We here investigate the growth mechanism of Sn-seeded GaSb nanowires and demonstrate how the seed particle and its dynamics at the growth interface of the nanowire determine the polarity, as well as the formation of structural defects. We use aberration-corrected scanning transmission electron microscopy imaging methodologies to study the interrelationship between the structural properties, i.e. polarity, growth mechanism, and formation of inclined twin boundaries in pairs. Moreover, the optical properties of the Sn-seeded GaSb nanowires are examined. Their photoluminescence response is compared with one of their Au-seeded counterparts, suggesting the incorporation of Sn atoms from the seed particles into the nanowires.
我们在这里研究了 Sn 种子 GaSb 纳米线的生长机制，并证明了种子颗粒及其在纳米线生长界面上的动力学如何决定极性以及结构缺陷的形成。我们使用经过像差校正的扫描透射电子显微镜成像方法来研究结构性质（即极性）、生长机制和倾斜孪晶对形成之间的相互关系。此外，还研究了 Sn 种子 GaSb 纳米线的光学性质。将它们的光致发光响应与 Au 种子 GaSb 纳米线的光致发光响应进行了比较，这表明 Sn 原子是从种子颗粒掺入纳米线中的。
