Korkusinski M, Studenikin S A, Aers G, Granger G, Kam A, Sachrajda A S
Security and Disruptive Technologies, National Research Council Canada, Ottawa, K1A 0R6, Canada.
Phys Rev Lett. 2017 Feb 10;118(6):067701. doi: 10.1103/PhysRevLett.118.067701. Epub 2017 Feb 8.
Manipulating qubits via electrical pulses in a piezoelectric material such as GaAs can be expected to generate incidental acoustic phonons. In this Letter we determine theoretically and experimentally the consequences of these phonons for semiconductor spin qubits using Landau-Zener-Stückelberg interferometry. Theoretical calculations predict that phonons in the presence of the spin-orbit interaction produce both phonon-Rabi fringes and accelerated evolution at the singlet-triplet anticrossing. Observed features confirm the influence of these mechanisms. Additionally, evidence is found that the pulsed gates themselves act as phonon cavities increasing the influence of phonons under specific resonant conditions.
通过电脉冲在诸如砷化镓等压电材料中操纵量子比特有望产生附带的声子。在本信函中,我们使用朗道 - 齐纳 - 施图克尔贝格干涉测量法从理论和实验上确定了这些声子对半导体自旋量子比特的影响。理论计算预测,在自旋 - 轨道相互作用存在的情况下,声子会在单重态 - 三重态反交叉处产生声子 - 拉比条纹和加速演化。观察到的特征证实了这些机制的影响。此外,还发现有证据表明脉冲门本身充当声子腔,在特定共振条件下增加了声子的影响。