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在电信频段的周期性极化铌酸锂薄膜中使用d进行宽带和频产生。

Broadband sum-frequency generation using d in periodically poled LiNbO thin film in the telecommunications band.

作者信息

Li Guangzhen, Chen Yuping, Jiang Haowei, Chen Xianfeng

出版信息

Opt Lett. 2017 Mar 1;42(5):939-942. doi: 10.1364/OL.42.000939.

DOI:10.1364/OL.42.000939
PMID:28248336
Abstract

We demonstrate the first, to the best of our knowledge, type-0 broadband sum-frequency generation (SFG) based on single-crystal periodically poled LiNbO (PPLN) thin film. The broad bandwidth property was largely tuned from mid-infrared region to the telecommunications band by engineering the thickness of PPLN from bulk crystal to nanoscale. It provides SFG a solution with both broadband and high efficiency by using the highest nonlinear coefficient d instead of d in type-I broadband SFG or second-harmonic generation. The measured 3 dB upconversion bandwidth is about 15.5 nm for a 4 cm long single crystal at 1530 nm wavelength. It can find applications in chip-scale spectroscopy, quantum information processing, LiNbO-thin-film-based microresonator and optical nonreciprocity devices, etc.

摘要

据我们所知,我们首次展示了基于单晶周期性极化铌酸锂(PPLN)薄膜的0型宽带和频产生(SFG)。通过将PPLN的厚度从体晶体调整到纳米尺度,宽带特性在很大程度上从中红外区域调谐到了电信波段。它通过使用最高的非线性系数d而不是I型宽带SFG或二次谐波产生中的d,为SFG提供了一种兼具宽带和高效率的解决方案。对于波长为1530nm、长度为4cm的单晶,测得的3dB上转换带宽约为15.5nm。它可应用于芯片级光谱学、量子信息处理、基于铌酸锂薄膜的微谐振器和光学非互易器件等领域。

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