硅图像传感器的理论最高帧率

The Theoretical Highest Frame Rate of Silicon Image Sensors.

作者信息

Etoh Takeharu Goji, Nguyen Anh Quang, Kamakura Yoshinari, Shimonomura Kazuhiro, Le Thi Yen, Mori Nobuya

机构信息

Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan.

Graduate School of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan.

出版信息

Sensors (Basel). 2017 Feb 28;17(3):483. doi: 10.3390/s17030483.

DOI:10.3390/s17030483

PMID:28264527

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC5375769/

Abstract

The frame rate of the digital high-speed video camera was 2000 frames per second (fps) in 1989, and has been exponentially increasing. A simulation study showed that a silicon image sensor made with a 130 nm process technology can achieve about 1010 fps. The frame rate seems to approach the upper bound. Rayleigh proposed an expression on the theoretical spatial resolution limit when the resolution of lenses approached the limit. In this paper, the temporal resolution limit of silicon image sensors was theoretically analyzed. It is revealed that the limit is mainly governed by mixing of charges with different travel times caused by the distribution of penetration depth of light. The derived expression of the limit is extremely simple, yet accurate. For example, the limit for green light of 550 nm incident to silicon image sensors at 300 K is 11.1 picoseconds. Therefore, the theoretical highest frame rate is 90.1 Gfps (about 1011 fps).

摘要

1989年，数字高速摄像机的帧率为每秒2000帧（fps），并且一直在呈指数级增长。一项模拟研究表明，采用130纳米制程技术制造的硅图像传感器可以实现约1010 fps的帧率。帧率似乎正在接近上限。瑞利提出了一个关于透镜分辨率接近极限时理论空间分辨率极限的表达式。在本文中，对硅图像传感器的时间分辨率极限进行了理论分析。结果表明，该极限主要由光穿透深度分布导致的不同传播时间的电荷混合所决定。推导出的极限表达式极其简单，但却准确。例如，在300 K温度下，550纳米的绿光入射到硅图像传感器时的极限为11.1皮秒。因此，理论上的最高帧率为90.1 Gfps（约1011 fps）。