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用于未来高分辨率图像传感器的高效（>70%）、宽光谱（400-1700纳米）亚微米厚铟镓砷光电二极管。

Highly-efficient (>70%) and Wide-spectral (400-1700 nm) sub-micron-thick InGaAs photodiodes for future high-resolution image sensors.

作者信息

Geum Dae-Myeong, Lim Jinha, Jang Junho, Ahn Seungyeop, Kim SeongKwang, Shim Joonsup, Kim Bong Ho, Park Juhyuk, Baek Woo Jin, Jeong Jaeyong, Kim SangHyeon

机构信息

School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea.

Department of Electrical and Computer Engineering, Inha University, Incheon, 22212, Republic of Korea.

出版信息

Light Sci Appl. 2024 Nov 15;13(1):311. doi: 10.1038/s41377-024-01652-6.

DOI:10.1038/s41377-024-01652-6
PMID:39548069
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11568205/
Abstract

This paper demonstrates the novel approach of sub-micron-thick InGaAs broadband photodetectors (PDs) designed for high-resolution imaging from the visible to short-wavelength infrared (SWIR) spectrum. Conventional approaches encounter challenges such as low resolution and crosstalk issues caused by a thick absorption layer (AL). Therefore, we propose a guided-mode resonance (GMR) structure to enhance the quantum efficiency (QE) of the InGaAs PDs in the SWIR region with only sub-micron-thick AL. The TiO/Au-based GMR structure compensates for the reduced AL thickness, achieving a remarkably high QE (>70%) from 400 to 1700 nm with only a 0.98 μm AL InGaAs PD (defined as 1 μm AL PD). This represents a reduction in thickness by at least 2.5 times compared to previous results while maintaining a high QE. Furthermore, the rapid transit time is highly expected to result in decreased electrical crosstalk. The effectiveness of the GMR structure is evident in its ability to sustain QE even with a reduced AL thickness, simultaneously enhancing the transit time. This breakthrough offers a viable solution for high-resolution and low-noise broadband image sensors.

摘要

本文展示了一种新型的亚微米厚铟镓砷宽带光电探测器（PDs）的设计方法，该探测器专为从可见光到短波红外（SWIR）光谱的高分辨率成像而设计。传统方法面临诸如由厚吸收层（AL）导致的低分辨率和串扰问题等挑战。因此，我们提出一种导模共振（GMR）结构，以仅使用亚微米厚的AL来提高SWIR区域中铟镓砷PDs的量子效率（QE）。基于TiO/Au的GMR结构补偿了AL厚度的减小，仅用0.98μm的AL铟镓砷PD（定义为1μm AL PD）在400至1700nm范围内实现了显著高的QE（>70%）。这意味着与先前结果相比厚度至少减小了2.5倍，同时保持了高QE。此外，快速渡越时间极有可能降低电串扰。GMR结构的有效性体现在即使AL厚度减小也能维持QE，同时提高渡越时间。这一突破为高分辨率和低噪声宽带图像传感器提供了一个可行的解决方案。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/c47e05a50506/41377_2024_1652_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/0146cf349b83/41377_2024_1652_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/55b9b89df735/41377_2024_1652_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/8ab50df0525b/41377_2024_1652_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/c47e05a50506/41377_2024_1652_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/0146cf349b83/41377_2024_1652_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/55b9b89df735/41377_2024_1652_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/8ab50df0525b/41377_2024_1652_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0be6/11568205/c47e05a50506/41377_2024_1652_Fig4_HTML.jpg

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