Alexander Jessica A, Scheltens Frank J, Drummy Lawrence F, Durstock Michael F, Hage Fredrik S, Ramasse Quentin M, McComb David W
Center for Electron Microscopy and Analysis, Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, United States.
Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, WPAFB, OH, United States.
Ultramicroscopy. 2017 Sep;180:125-132. doi: 10.1016/j.ultramic.2017.03.004. Epub 2017 Mar 2.
Advances in electron monochromator technology are providing opportunities for high energy resolution (10 - 200meV) electron energy-loss spectroscopy (EELS) to be performed in the scanning transmission electron microscope (STEM). The energy-loss near-edge structure in core-loss spectroscopy is often limited by core-hole lifetimes rather than the energy spread of the incident illumination. However, in the valence-loss region, the reduced width of the zero loss peak makes it possible to resolve clearly and unambiguously spectral features at very low energy-losses (<3eV). In this contribution, high-resolution EELS was used to investigate four materials commonly used in organic photovoltaics (OPVs): poly(3-hexlythiophene) (P3HT), [6,6] phenyl-C butyric acid methyl ester (PCBM), copper phthalocyanine (CuPc), and fullerene (C). Data was collected on two different monochromated instruments - a Nion UltraSTEM 100 MC 'HERMES' and a FEI Titan 60-300 Image-Corrected S/TEM - using energy resolutions (as defined by the zero loss peak full-width at half-maximum) of 35meV and 175meV, respectively. The data was acquired to allow deconvolution of plural scattering, and Kramers-Kronig analysis was utilized to extract the complex dielectric functions. The real and imaginary parts of the complex dielectric functions obtained from the two instruments were compared to evaluate if the enhanced resolution in the Nion provides new opto-electronic information for these organic materials. The differences between the spectra are discussed, and the implications for STEM-EELS studies of advanced materials are considered.
电子单色仪技术的进步为在扫描透射电子显微镜(STEM)中进行高能量分辨率(10 - 200毫电子伏特)的电子能量损失谱(EELS)提供了机会。芯损失谱中的能量损失近边结构通常受芯孔寿命限制,而非入射照明的能量展宽。然而,在价损失区域,零损失峰宽度的减小使得在非常低的能量损失(<3电子伏特)下能够清晰明确地分辨光谱特征。在本论文中,高分辨率EELS被用于研究有机光伏(OPV)中常用的四种材料:聚(3 - 己基噻吩)(P3HT)、[6,6]苯基 - C丁酸甲酯(PCBM)、铜酞菁(CuPc)和富勒烯(C)。数据是在两台不同的单色仪仪器上采集的——一台Nion UltraSTEM 100 MC“HERMES”和一台FEI Titan 60 - 300图像校正扫描透射电子显微镜——能量分辨率(由零损失峰半高宽定义)分别为35毫电子伏特和175毫电子伏特。采集数据以允许对多重散射进行去卷积,并利用克莱默斯 - 克勒尼希分析来提取复介电函数。比较了从两台仪器获得的复介电函数的实部和虚部,以评估Nion仪器中增强的分辨率是否能为这些有机材料提供新的光电信息。讨论了光谱之间的差异,并考虑了对先进材料的STEM - EELS研究的影响。