Department of Mechanical Engineering and Science, Kyoto University , Nishikyo-ku, Kyoto 615-8540, Japan.
Department of Engineering Mechanics, School of Aeronautics and Astronautics, Zhejiang University , Hangzhou 310027, China.
Nano Lett. 2017 Apr 12;17(4):2674-2680. doi: 10.1021/acs.nanolett.7b00505. Epub 2017 Mar 17.
Ultrathin multiferroics with coupled ferroelectric and ferromagnetic order parameters hold promise for novel technological paradigms, such as extremely thin magnetoelectric memories. However, these ferroic orders and their functions inevitably disappear below a fundamental size limit of several nanometers. Herein, we propose a novel design strategy for nanoscale multiferroics smaller than the critical size limit by engineering the dislocations in nonmagnetic ferroelectrics, even though these lattice defects are generally believed to be detrimental. First-principles calculations demonstrate that Ti-rich PbTiO dislocations exhibit magnetism due to the local nonstoichiometry intrinsic to the core structures. Highly localized spin moments in conjunction with the host ferroelectricity enable these dislocations to function as atomic-scale multiferroic channels with a pronounced magnetoelectric effect that are associated with the antiferromagnetic-ferromagnetic-nonmagnetic phase transitions in response to polarization switching. The present results thus suggest a new field of dislocation (or defect) engineering for the fabrication of ultrathin magnetoelectric multiferroics and ultrahigh density electronic devices.
具有耦合铁电和铁磁序参量的超薄多铁性材料有望为新型技术范例提供支持,例如极薄的磁电存储器。然而,这些铁电序及其功能不可避免地会在几个纳米的基本尺寸限制以下消失。在此,我们通过工程化非磁性铁电体中的位错提出了一种新的纳米级多铁性设计策略,即使这些晶格缺陷通常被认为是有害的。第一性原理计算表明,富钛 PbTiO 位错由于核心结构固有的局部非化学计量比而表现出磁性。高度局域化的自旋矩与主体铁电性相结合,使这些位错能够作为原子级多铁性通道发挥作用,具有显著的磁电效应,这种效应与极化切换响应中的反铁磁-铁磁-非磁相变相关联。因此,这些结果为制造超薄磁电多铁性材料和超高密度电子器件提供了一个新的位错(或缺陷)工程领域。