Department of Chemistry, ‡Program in Applied Physics, University of Michigan , 930 North University Avenue, Ann Arbor, Michigan 48109-1055, United States.
Langmuir. 2017 Sep 19;33(37):9280-9287. doi: 10.1021/acs.langmuir.7b00645. Epub 2017 Apr 17.
The direct preparation of crystalline indium antimonide (InSb) by the electrodeposition of antimony (Sb) onto indium (In) working electrodes has been demonstrated. When Sb is electrodeposited from dilute aqueous electrolytes containing dissolved SbO, an alloying reaction is possible between Sb and In if any surface oxide films are first thoroughly removed from the electrode. The presented Raman spectra detail the interplay between the formation of crystalline InSb and the accumulation of Sb as either amorphous or crystalline aggregates on the electrode surface as a function of time, temperature, potential, and electrolyte composition. Electron and optical microscopies confirm that under a range of conditions, the preparation of a uniform and phase-pure InSb film is possible. The cumulative results highlight this methodology as a simple yet potent strategy for the synthesis of intermetallic compounds of interest.
通过将锑（Sb）电沉积到铟（In）工作电极上，直接制备了结晶的锑化铟（InSb）。当 Sb 从含有溶解的 SbO 的稀水溶液电解质中电沉积时，如果首先彻底去除电极表面的任何氧化膜，则 Sb 与 In 之间可能发生合金化反应。所呈现的 Raman 光谱详细说明了在时间、温度、电位和电解质组成的函数下，形成结晶 InSb 与 Sb 作为非晶或结晶聚集体在电极表面积累之间的相互作用。电子和光学显微镜证实，在一系列条件下，可以制备均匀且相纯的 InSb 薄膜。累积结果突出了这种方法作为一种简单而有效的策略，用于合成感兴趣的金属间化合物。
