State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, School of Physics, Sun Yat-sen University, Guangzhou 510275, China.
Nanoscale. 2017 May 4;9(17):5483-5488. doi: 10.1039/c7nr01397c.
Nanowire quantum dots (NW-QDs) can be used for future compact and efficient optoelectronic devices. Many efforts have been made to control the QD states by inserting the QDs in doped structures and applying an electric field in a nanowire system. In this paper, we use down-conversion and up-conversion photoluminescence excitations to explore the optical and electronic properties of single quantum dots in GaAs/AlGaAs core-shell nanowires. We investigate a large optical Stark shift in this system as a new method to tune the QD states. When the tunable laser lies within the spectral bandwidth of ZB/WZ GaAs (780 nm-860 nm), we observe an extremely large optical Stark shift of 1.3 nm (0.5 nm) with increasing excitation power at a resonant wavelength of 800 nm (840 nm) in GaAs states. The ability to in situ control the energy states of self-catalyzed NW-QDs should open a new way for quantum light sources and nonlinear optics in a nanowire system.
纳米线量子点 (NW-QDs) 可用于未来的紧凑型高效光电设备。许多研究致力于通过在掺杂结构中插入量子点并在纳米线系统中施加电场来控制 QD 状态。在本文中，我们使用下转换和上转换光致发光激发来探索 GaAs/AlGaAs 核壳纳米线中单个量子点的光学和电子性质。我们研究了该系统中的大光学斯塔克位移作为一种新的调谐 QD 状态的方法。当可调谐激光位于 ZB/WZ GaAs 的光谱带宽内（780nm-860nm）时，我们在 GaAs 态下在共振波长 800nm（840nm）处观察到随着激发功率的增加，光学斯塔克位移非常大，为 1.3nm（0.5nm）。原位控制自催化 NW-QD 能态的能力应该为纳米线系统中的量子光源和非线性光学开辟新途径。
