使用双（二甲基氨基-2-丙醇）铜（II）和水通过原子层沉积法制备氧化亚铜薄膜
Atomic layer deposition of Cu(i) oxide films using Cu(ii) bis(dimethylamino-2-propoxide) and water.
作者信息
Avila J R, Peters A W, Li Zhanyong, Ortuño M A, Martinson A B F, Cramer C J, Hupp J T, Farha O K
机构信息
Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA.
出版信息
Dalton Trans. 2017 May 9;46(18):5790-5795. doi: 10.1039/c6dt02572b.
To grow films of CuO, bis-(dimethylamino-2-propoxide)Cu(ii), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).
为了生长氧化铜薄膜，双（二甲基氨基 - 2 - 丙醇盐）铜（II），即Cu（dmap），被用作原子层沉积前驱体，仅使用水蒸气作为共反应物。在110至175°C之间，使用原位石英晶体微天平（QCM）测量得出每个循环的生长速率为0.12±0.02 Å。X射线光电子能谱（XPS）证实了具有Cu（I）的金属氧化物薄膜的生长。
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