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厌恶记忆的两个组成部分,即麻醉敏感记忆和麻醉抵抗记忆,需要Rgk1小GTP酶内的不同结构域。

Two Components of Aversive Memory in , Anesthesia-Sensitive and Anesthesia-Resistant Memory, Require Distinct Domains Within the Rgk1 Small GTPase.

作者信息

Murakami Satoshi, Minami-Ohtsubo Maki, Nakato Ryuichiro, Shirahige Katsuhiko, Tabata Tetsuya

机构信息

Laboratory of Neuroscience, Institute of Molecular and Cellular Biosciences, University of Tokyo, Tokyo 113-0032, Japan, and.

Laboratory of Genome Structure and Function, Research Center for Epigenetic Disease, Institute of Molecular and Cellular Biosciences, University of Tokyo, Tokyo 113-0032, Japan.

出版信息

J Neurosci. 2017 May 31;37(22):5496-5510. doi: 10.1523/JNEUROSCI.3648-16.2017. Epub 2017 Apr 17.

Abstract

Multiple components have been identified that exhibit different stabilities for aversive olfactory memory in These components have been defined by behavioral and genetic studies and genes specifically required for a specific component have also been identified. Intermediate-term memory generated after single cycle conditioning is divided into anesthesia-sensitive memory (ASM) and anesthesia-resistant memory (ARM), with the latter being more stable. We determined that the ASM and ARM pathways converged on the Rgk1 small GTPase and that the N-terminal domain-deleted Rgk1 was sufficient for ASM formation, whereas the full-length form was required for ARM formation. Rgk1 is specifically accumulated at the synaptic site of the Kenyon cells (KCs), the intrinsic neurons of the mushroom bodies, which play a pivotal role in olfactory memory formation. A higher than normal Rgk1 level enhanced memory retention, which is consistent with the result that Rgk1 suppressed Rac-dependent memory decay; these findings suggest that bolsters ASM via the suppression of forgetting. We propose that Rgk1 plays a pivotal role in the regulation of memory stabilization by serving as a molecular node that resides at KC synapses, where the ASM and ARM pathway may interact. Memory consists of multiple components. olfactory memory serves as a fundamental model with which to investigate the mechanisms that underlie memory formation and has provided genetic and molecular means to identify the components of memory, namely short-term, intermediate-term, and long-term memory, depending on how long the memory lasts. Intermediate memory is further divided into anesthesia-sensitive memory (ASM) and anesthesia-resistant memory (ARM), with the latter being more stable. We have identified a small GTPase in , Rgk1, which plays a pivotal role in the regulation of olfactory memory stability. Rgk1 is required for both ASM and ARM. Moreover, N-terminal domain-deleted Rgk1 was sufficient for ASM formation, whereas the full-length form was required for ARM formation.

摘要

已鉴定出多种对厌恶嗅觉记忆具有不同稳定性的成分。这些成分已通过行为和遗传学研究得以明确,并且还鉴定出了特定成分所特需的基因。单次循环条件训练后产生的中期记忆分为麻醉敏感记忆(ASM)和麻醉抗性记忆(ARM),后者更为稳定。我们确定ASM和ARM通路在Rgk1小GTP酶上汇聚,并且N端结构域缺失的Rgk1足以形成ASM,而全长形式则是形成ARM所必需的。Rgk1特异性地聚集在蕈形体的内在神经元肯扬细胞(KC)的突触部位,蕈形体在嗅觉记忆形成中起关键作用。高于正常水平的Rgk1增强了记忆保持,这与Rgk1抑制Rac依赖性记忆衰退的结果一致;这些发现表明,Rgk1通过抑制遗忘来增强ASM。我们提出,Rgk1作为位于KC突触的分子节点,在记忆稳定的调节中起关键作用,ASM和ARM通路可能在此相互作用。记忆由多个成分组成。嗅觉记忆是研究记忆形成机制的基本模型,并提供了遗传和分子手段来识别记忆的成分,即短期、中期和长期记忆,这取决于记忆持续的时间。中期记忆进一步分为麻醉敏感记忆(ASM)和麻醉抗性记忆(ARM),后者更为稳定。我们在[具体物种未提及]中鉴定出一种小GTP酶Rgk1,它在嗅觉记忆稳定性的调节中起关键作用。ASM和ARM都需要Rgk1。此外,N端结构域缺失的Rgk1足以形成ASM,而全长形式则是形成ARM所必需的。

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