Lefèvre Robin, Berthebaud David, Gascoin Franck
Laboratoire CRISMAT UMR6508, 6 Blvd du Maréchal Juin, 14050 Caen Cedex 4, France.
Acta Crystallogr E Crystallogr Commun. 2017 Mar 14;73(Pt 4):500-502. doi: 10.1107/S2056989017003292. eCollection 2017 Apr 1.
The new thallium penta-(indium/chromium) octa-selenide, TlInCrSe, has been synthesized by solid-state reaction. It crystallizes isotypically with TlInSe in the space group 2/. Although the two Tl positions are disordered and only partially occupied, no Tl deficiency was observed. The insertion of chromium in the structure has been confirmed by EDS analysis. Chromium substitutes indium exclusively at one of three In sites, at one of the positions with site symmetry 2/ (Wyckoff position 2). In the crystal structure, edge-sharing InSe octa-hedra, and (In,Cr)Se octa-hedra and InSe tetra-hedra make up two types of columns that are linked into a framework in which two different types of channels parallel to [010] are present. The Tl atoms are located in the larger of the channels, whereas the other, smaller channel remains unoccupied.
新型五（铟/铬）八硒化铊TlInCrSe已通过固态反应合成。它与TlInSe同构结晶，空间群为2/。尽管两个铊位置无序且仅部分占据，但未观察到铊缺陷。结构中铬的插入已通过能谱分析得到证实。铬仅在三个铟位点之一取代铟，位于点对称2/（Wyckoff位置2）的位置之一。在晶体结构中，共边的InSe八面体、(In,Cr)Se八面体和InSe四面体构成两种类型的柱体，它们连接成一个框架，其中存在两种平行于[010]的不同类型的通道。铊原子位于较大的通道中，而另一个较小的通道未被占据。
