Institute of Physics and Applied Physics, Yonsei University , 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea.
ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute(ETRI) , 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea.
ACS Appl Mater Interfaces. 2017 May 10;9(18):15592-15598. doi: 10.1021/acsami.7b02838. Epub 2017 Apr 26.
We report the fabrication of hybrid PN junction diode and complementary (CMOS) inverters, where 2D p-type MoTe and n-type thin film InGaZnO (IGZO) are coupled for each device process. IGZO thin film was initially patterned by conventional photolithography either for n-type material in a PN diode or for n-channel of top-gate field-effect transistors (FET) in CMOS inverter. The hybrid PN junction diode shows a good ideality factor of 1.57 and quite a high ON/OFF rectification ratio of ∼3 × 10. Under photons, our hybrid PN diode appeared somewhat stable only responding to high-energy photons of blue and ultraviolet. Our 2D nanosheet-oxide film hybrid CMOS inverter exhibits voltage gains as high as ∼40 at 5 V, low power consumption less than around a few nW at 1 V, and ∼200 μs switching dynamics.
我们报告了混合 PN 结二极管和互补（CMOS）反相器的制造，其中 2D p 型 MoTe 和 n 型薄膜 InGaZnO（IGZO）分别与每个器件工艺耦合。IGZO 薄膜最初通过传统光刻进行图案化，无论是用于 PN 二极管的 n 型材料还是用于 CMOS 反相器中的顶栅场效应晶体管（FET）的 n 沟道。混合 PN 结二极管表现出良好的理想因子 1.57 和相当高的 ON/OFF 整流比约为 3×10。在光子下，我们的混合 PN 二极管似乎只对高能光子的蓝光和紫外线有响应，表现出一定的稳定性。我们的二维纳米片-氧化物薄膜混合 CMOS 反相器在 5 V 时表现出高达约 40 的电压增益，在 1 V 时的功耗低于几纳瓦，并且具有约 200 μs 的开关动态。
