Electronic Properties of Graphene-PtSe Contacts.

In this article, we study the electronic properties of graphene in contact with monolayer and bilayer PtSe using first-principles calculations. It turns out that there is no charge transfer between the components because of the weak van der Waals interaction. We calculate the work functions of monolayer and bilayer PtSe and analyze the band bending at the contact with graphene. The formation of an n-type Schottky contact with monolayer PtSe and a p-type Schottky contact with bilayer PtSe is demonstrated. The Schottky barrier height is very low in the bilayer case and can be reduced to zero by 0.8% biaxial tensile strain.