School of Materials Science and Engineering, Gwangju Institute of Science & Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea.
Nanoscale. 2017 Jul 13;9(27):9333-9339. doi: 10.1039/c7nr01883e.
Chemical doping of transition metal dichalcogenides (TMDCs) has drawn significant interest because of its applicability to the modification of electrical and optical properties of TMDCs. This is of fundamental and technological importance for high-efficiency electronic and optoelectronic devices. Here, we present a simple and facile route to reversible and controllable modulation of the electrical and optical properties of WS and MoSvia hydrazine doping and sulfur annealing. Hydrazine treatment of WS improves the field-effect mobilities, on/off current ratios, and photoresponsivities of the devices. This is due to the surface charge transfer doping of WS and the sulfur vacancies formed by its reduction, which result in an n-type doping effect. The changes in the electrical and optical properties are fully recovered when the WS is annealed in an atmosphere of sulfur. This method for reversible modulation can be applied to other transition metal disulfides including MoS, which may enable the fabrication of two-dimensional electronic and optoelectronic devices with tunable properties and improved performance.
过渡金属二硫属化物（TMDCs）的化学掺杂因其可用于修饰 TMDCs 的电学和光学性质而引起了极大的关注。这对于高效电子和光电子器件具有重要的基础和技术意义。在这里，我们提出了一种简单易行的方法，可通过水合肼掺杂和硫退火来实现 WS 和 MoS 的电学和光学性质的可逆和可控调节。WS 的水合肼处理提高了器件的场效应迁移率、导通/关断电流比和光电响应率。这是由于 WS 的表面电荷转移掺杂和还原形成的硫空位导致了 n 型掺杂效应。当 WS 在硫气氛中退火时，其电学和光学性质的变化可以完全恢复。这种可逆调制的方法可应用于包括 MoS 在内的其他过渡金属二硫化物，这可能使具有可调性质和改进性能的二维电子和光电子器件的制造成为可能。
