Ming Hsieh Department of Electrical Engineering, University of Southern California , Los Angeles, California 90089, United States.
Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong SAR, China.
ACS Nano. 2017 May 23;11(5):5113-5119. doi: 10.1021/acsnano.7b02124. Epub 2017 May 4.
Recent developments in nanophotonics have provided a clear roadmap for improving the efficiency of photonic devices through control over absorption and emission of devices. These advances could prove transformative for a wide variety of devices, such as photovoltaics, photoelectrochemical devices, photodetectors, and light-emitting diodes. However, it is often challenging to physically create the nanophotonic designs required to engineer the optical properties of devices. Here, we present a platform based on crystalline indium phosphide that enables thin-film nanophotonic structures with physical morphologies that are impossible to achieve through conventional state-of-the-art material growth techniques. Here, nanostructured InP thin films have been demonstrated on non-epitaxial alumina inverted nanocone (i-cone) substrates via a low-cost and scalable thin-film vapor-liquid-solid growth technique. In this process, indium films are first evaporated onto the i-cone structures in the desired morphology, followed by a high-temperature step that causes a phase transformation of the indium into indium phosphide, preserving the original morphology of the deposited indium. Through this approach, a wide variety of nanostructured film morphologies are accessible using only control over evaporation process variables. Critically, the as-grown nanotextured InP thin films demonstrate excellent optoelectronic properties, suggesting this platform is promising for future high-performance nanophotonic devices.
近年来,纳米光子学的发展为通过控制器件的吸收和发射来提高光子器件的效率提供了明确的路线图。这些进展可能会彻底改变各种设备,如光伏、光电化学器件、光探测器和发光二极管。然而,通常很难从物理上创建所需的纳米光子设计来工程化器件的光学性质。在这里,我们提出了一个基于磷化铟的平台,该平台能够实现具有物理形态的薄膜纳米光子结构,而这些物理形态是通过传统的最先进的材料生长技术无法实现的。在这里,通过一种低成本且可扩展的薄膜汽-液-固生长技术,在非外延氧化铝倒置纳米锥形(i-cone)衬底上展示了具有纳米结构的磷化铟薄膜。在这个过程中,首先将铟薄膜蒸发到所需形态的 i-cone 结构上,然后进行高温处理,使铟发生相变形成磷化铟,同时保留沉积铟的原始形态。通过这种方法,仅通过控制蒸发过程变量就可以获得各种具有纳米结构的薄膜形态。关键的是,所生长的具有纳米纹理的磷化铟薄膜表现出优异的光电性能,这表明该平台有望用于未来的高性能纳米光子器件。