Paušová Šárka, Kment Štěpán, Zlámal Martin, Baudys Michal, Hubička Zdeněk, Krýsa Josef
University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic.
Palacký University, RCPTM, Joint Laboratory of Optics, 17. Listopadu 12, 771 46 Olomouc, Czech Republic.
Molecules. 2017 May 10;22(5):775. doi: 10.3390/molecules22050775.
This work describes the preparation of transparent TiO₂ nanotube (TNT) arrays on fluorine-doped tin oxide (FTO) substrates. An optimized electrolyte composition (0.2 mol dm NH₄F and 4 mol dm H₂O in ethylene glycol) was used for the anodization of Ti films with different thicknesses (from 100 to 1300 nm) sputtered on the FTO glass substrates. For Ti thicknesses 600 nm and higher, anodization resulted in the formation of TNT arrays with an outer nanotube diameter around 180 nm and a wall thickness around 45 nm, while for anodized Ti thicknesses of 100 nm, the produced nanotubes were not well defined. The transmittance in the visible region (λ = 500 nm) varied from 90% for the thinnest TNT array to 65% for the thickest TNT array. For the fabrication of transparent TNT arrays by anodization, the optimal Ti thickness on FTO was around 1000 nm. Such fabricated TNT arrays with a length of 2500 nm exhibit stable photocurrent densities in aqueous electrolytes (~300 µA cm at potential 0.5 V vs. Ag/AgCl). The stability of the photocurrent response and a sufficient transparency (≥65%) enables the use of transparent TNT arrays in photoelectrochemical applications when the illumination from the support/semiconductor interface is a necessary condition and the transmitted light can be used for another purpose (photocathode or photochemical reaction in the electrolyte).
这项工作描述了在氟掺杂氧化锡(FTO)衬底上制备透明二氧化钛纳米管(TNT)阵列的过程。使用优化的电解质成分(乙二醇中0.2 mol dm⁻³NH₄F和4 mol dm⁻³H₂O)对溅射在FTO玻璃衬底上不同厚度(100至1300 nm)的钛薄膜进行阳极氧化。对于600 nm及以上的钛厚度,阳极氧化导致形成外径约180 nm、壁厚约45 nm的TNT阵列,而对于100 nm厚度的阳极氧化钛,所产生的纳米管定义不清晰。可见光区域(λ = 500 nm)的透过率从最薄的TNT阵列的90%到最厚的TNT阵列的65%不等。通过阳极氧化制备透明TNT阵列时,FTO上的最佳钛厚度约为1000 nm。这种制备的长度为2500 nm的TNT阵列在水性电解质中表现出稳定的光电流密度(在相对于Ag/AgCl为0.5 V的电位下约为300 µA cm⁻²)。光电流响应的稳定性和足够的透明度(≥65%)使得当来自支撑体/半导体界面的光照是必要条件且透射光可用于其他目的(光电阴极或电解质中的光化学反应)时,透明TNT阵列可用于光电化学应用。