Li Bingbing, Taylor Jason R, Wang Wei, Gao Chuanji, Guo Chunyan
School of Education Science, Jiangsu Normal University, Xuzhou 221116, PR China; Beijing Key Laboratory of Learning and Cognition, Department of Psychology, Capital Normal University, Beijing 100048, PR China.
Division of Neuroscience and Experimental Psychology, School of Biological Sciences, Faculty of Biology, Medicine, and Health, University of Manchester, Manchester Academic Health Science Centre, Manchester, United Kingdom.
Conscious Cogn. 2017 Aug;53:1-13. doi: 10.1016/j.concog.2017.05.001. Epub 2017 May 27.
Processing fluency appears to influence recognition memory judgements, and the manipulation of fluency, if misattributed to an effect of prior exposure, can result in illusory memory. Although it is well established that fluency induced by masked repetition priming leads to increased familiarity, manipulations of conceptual fluency have produced conflicting results, variously affecting familiarity or recollection. Some recent studies have found that masked conceptual priming increases correct recollection (Taylor & Henson, 2012), and the magnitude of this behavioural effect correlates with analogous fMRI BOLD priming effects in brain regions associated with recollection (Taylor, Buratto, & Henson, 2013). However, the neural correlates and time-courses of masked repetition and conceptual priming were not compared directly in previous studies. The present study used event-related potentials (ERPs) to identify and compare the electrophysiological correlates of masked repetition and conceptual priming and investigate how they contribute to recognition memory. Behavioural results were consistent with previous studies: Repetition primes increased familiarity, whereas conceptual primes increased correct recollection. Masked repetition and conceptual priming also decreased the latency of late parietal component (LPC). Masked repetition priming was associated with an early P200 effect and a later parietal maximum N400 effect, whereas masked conceptual priming was only associated with a central-parietal maximum N400 effect. In addition, the topographic distributions of the N400 repetition priming and conceptual priming effects were different. These results suggest that fluency at different levels of processing is associated with different ERP components, and contributes differentially to subjective recognition memory experiences.
加工流畅性似乎会影响识别记忆判断,而且如果将流畅性的操控错误归因于先前接触的影响,可能会导致虚假记忆。虽然已经充分证实,由掩蔽重复启动诱导的流畅性会导致熟悉度增加,但概念流畅性的操控却产生了相互矛盾的结果,对熟悉度或回忆产生了不同的影响。最近的一些研究发现,掩蔽概念启动会增加正确回忆(泰勒和亨森,2012年),这种行为效应的大小与大脑中与回忆相关区域的类似功能性磁共振成像血氧水平依赖启动效应相关(泰勒、布拉托和亨森,2013年)。然而,在以往的研究中,并未直接比较掩蔽重复启动和概念启动的神经关联及时间进程。本研究使用事件相关电位(ERP)来识别和比较掩蔽重复启动和概念启动的电生理关联,并研究它们如何对识别记忆产生影响。行为结果与以往研究一致:重复启动增加了熟悉度,而概念启动增加了正确回忆。掩蔽重复启动和概念启动还缩短了顶叶晚期成分(LPC)的潜伏期。掩蔽重复启动与早期P200效应和后期顶叶最大N400效应相关,而掩蔽概念启动仅与中央顶叶最大N400效应相关。此外,N400重复启动和概念启动效应的地形分布不同。这些结果表明,不同加工水平的流畅性与不同的ERP成分相关,并对主观识别记忆体验有不同的贡献。