Micro-optoelectronic Systems Laboratories, Xi'an Technological University, Xi'an, 710032, Shaanxi, China.
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, Shaanxi, China.
Sci Rep. 2017 Jun 9;7(1):3201. doi: 10.1038/s41598-017-03620-0.
In this work, the (NaBi)(MoW)O (x = 0.0, 0.5 and 1.0) ceramics were prepared via solid state reaction method. All the samples can be well densified at sintering temperature about 720 °C. Dense and homogeneous microstructure with grain size lying between 28 μm can be observed from scanning electron microscopy (SEM). Microwave dielectric permittivity of the (NaBi)(MoW)O ceramic was found to be temperature-independent in a wide range between 25120 °C with a temperature coefficient of frequency (TCF) ~-6 ppm/°C, a permittivity ~28.9, and Qf values 12,00014,000 GHz. Crystal structure was refined using Rietveld method and lattice parameters are a = b = 5.281 (5) Å and c = 11.550 (6) Å with a space group I 4/a (88). The (NaBi)(MoW)O ceramics might be good candidate for low temperature co-fired ceramics (LTCC) technology.
在这项工作中，通过固相反应法制备了(NaBi)(MoW)O(x=0.0、0.5 和 1.0)陶瓷。所有样品都可以在约 720°C 的烧结温度下很好地致密化。从扫描电子显微镜(SEM)可以观察到致密均匀的微观结构，晶粒尺寸在 2-8μm 之间。(NaBi)(MoW)O 陶瓷的微波介电常数在 25-120°C 的宽范围内表现出温度无关性，频率温度系数(TCF)为-6ppm/°C，介电常数为~28.9，Qf 值为 12000-14000GHz。使用Rietveld 方法对晶体结构进行了细化，晶格参数为 a=b=5.281(5)Å 和 c=11.550(6)Å，空间群为 I 4/a(88)。(NaBi)(MoW)O 陶瓷可能是低温共烧陶瓷(LTCC)技术的良好候选材料。
