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1吉赫兹磷化铟片上单片扩展腔碰撞脉冲锁模激光器。

1  GHz InP on-chip monolithic extended cavity colliding-pulse mode-locked laser.

作者信息

Guzmán R, Gordon C, Orbe L, Carpintero G

出版信息

Opt Lett. 2017 Jun 15;42(12):2318-2321. doi: 10.1364/OL.42.002318.

DOI:10.1364/OL.42.002318
PMID:28614341
Abstract

A record low-repetition rate from an on-chip monolithic InP extended cavity colliding-pulse mode-locked laser is experimentally reported. The device, fabricated in generic InP-based active-passive integration technology, makes use of integrated mirrors to enable its use as a building block within a photonic integrated circuit. This structure allows us to generate an electrical frequency comb with mode spacing of 1 GHz, determined by the 40.5 mm long resonator. Passive and hybrid mode-locking regime conditions are experimentally demonstrated. In the passive regime, an electrical beat tone at the fundamental repetition rate with an electrical linewidth (LW) of 398 kHz and a signal-to-noise ratio (SNR) >30  dB is measured. In the hybrid regime, the optical comb is locked to a continuous wave signal source, improving the LW of the generated signal and the SNR>40  dB.

摘要

实验报道了一种片上单片集成磷化铟扩展腔碰撞脉冲锁模激光器的创纪录低重复率。该器件采用通用的基于磷化铟的有源 - 无源集成技术制造,利用集成反射镜使其能够作为光子集成电路中的一个构建模块使用。这种结构使我们能够产生模式间距为1GHz的电频率梳,由40.5mm长的谐振器决定。实验证明了被动和混合锁模状态条件。在被动状态下,测量到基重复率下的电拍频,其电线宽(LW)为398kHz,信噪比(SNR)>30dB。在混合状态下,光学频率梳被锁定到连续波信号源,改善了产生信号的线宽且信噪比>40dB。

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