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用于宽带抗反射和光捕获的纳米结构沉积氧化铟锡薄膜。

Nanostructured as-deposited indium tin oxide thin films for broadband antireflection and light trapping.

机构信息

IT-Austrian Institute of Technology, Biosensor Technologies, Muthgasse 11, A-1190 Vienna, Austria. AIT- Austrian Institute of Technology, Center for Energy, Photovoltaic Systems, Giefinggasse 2, A-1210 Vienna, Austria.

出版信息

Nanotechnology. 2017 Aug 11;28(32):325201. doi: 10.1088/1361-6528/aa79df. Epub 2017 Jun 15.

DOI:10.1088/1361-6528/aa79df
PMID:28617246
Abstract

Indium tin oxide (ITO) thin films were sputter-deposited at ambient temperature on a glass-like substrate that was periodically nanostructured by UV nanoimprint lithography. Cross gratings of the corrugated and conformal ITO, with different periods and modulation depths, were tailored to exhibit light trapping or antireflection properties at specific spectral windows by combined optical simulations and experiments. For dense gratings, the light transmission in the 450-850 nm range was enhanced by 8% (absolute) compared to flat ITO films, which is one of the largest performance improvements reported in the literature for nanostructured transparent electrodes. Increasing the grating period shifts the threshold for diffraction coupling to waveguide modes in the visible and near infrared part of the spectrum, resulting in broad light trapping behaviour at wavelengths below this threshold. This work demonstrates a simple processing route at ambient temperature for the fabrication of high-performance transparent electrodes in order to fulfil different device requirements.

摘要

氧化铟锡(ITO)薄膜在室温下通过磁控溅射沉积在周期性纳米压印光刻的玻璃状基底上。通过结合光学模拟和实验,对具有不同周期和调制深度的波纹和共形 ITO 交叉光栅进行了定制,以在特定光谱窗口表现出光捕获或抗反射特性。对于密集光栅,与平面 ITO 薄膜相比,450-850nm 范围内的光透过率提高了 8%(绝对值),这是文献中报道的用于纳米结构透明电极的最大性能改进之一。增加光栅周期会将衍射耦合到光谱可见和近红外部分的波导模式的阈值转移,从而在该阈值以下的波长处产生宽的光捕获行为。这项工作展示了一种在室温下制造高性能透明电极的简单处理方法,以满足不同器件的要求。

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引用本文的文献

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Sci Rep. 2021 Apr 6;11(1):7551. doi: 10.1038/s41598-021-87181-3.