Kobayashi Akihiro, Misumida Naoki, Aoi Shunsuke, Kanei Yumiko
Department of Internal Medicine, Mount Sinai Beth Israel, New York, USA.
Department of Internal Medicine, Mount Sinai Beth Israel, New York, USA.
J Electrocardiol. 2017 Nov-Dec;50(6):870-875. doi: 10.1016/j.jelectrocard.2017.06.012. Epub 2017 Jun 8.
Low QRS voltage was reported to predict adverse outcomes in acute myocardial infarction in the pre-thrombolytic era. However, the association between low voltage and angiographic findings has not been fully addressed.
We performed a retrospective analysis of patients with anterior ST-segment elevation myocardial infarction (STEMI). Low QRS voltage was defined as either peak to peak QRS complex voltage <1.0mV in all precordial leads or <0.5mV in all limb leads.
Among 190 patients, 37 patients (19%) had low voltage. Patients with low voltage had a higher rate of multi-vessel disease (MVD) (76% vs. 52%, p=0.01). Patients with low voltage were more likely to undergo coronary artery bypass grafting (CABG) during admission (11% vs. 2%, p=0.028). Low voltage was an independent predictor for MVD (OR 2.50; 95% CI 1.12 to 6.03; p=0.032).
Low QRS voltage was associated with MVD and in-hospital CABG in anterior STEMI.
在溶栓治疗前的时代,有报道称低QRS电压可预测急性心肌梗死的不良结局。然而,低电压与血管造影结果之间的关联尚未得到充分探讨。
我们对前壁ST段抬高型心肌梗死(STEMI)患者进行了回顾性分析。低QRS电压定义为所有胸前导联的QRS波群峰峰值电压<1.0mV或所有肢体导联的QRS波群峰峰值电压<0.5mV。
在190例患者中,37例(19%)存在低电压。低电压患者的多支血管病变(MVD)发生率更高(76%对52%,p=0.01)。低电压患者在住院期间更有可能接受冠状动脉旁路移植术(CABG)(11%对2%,p=0.028)。低电压是MVD的独立预测因素(OR 2.50;95%CI 1.12至6.03;p=0.032)。
在前壁STEMI中,低QRS电压与MVD及住院期间CABG相关。