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基于紫外光激活 ZnO 纳米网络的高效室温氢气传感器。

Efficient room temperature hydrogen sensor based on UV-activated ZnO nano-network.

机构信息

Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur-342011, India.

出版信息

Nanotechnology. 2017 Sep 8;28(36):365502. doi: 10.1088/1361-6528/aa7cad. Epub 2017 Jun 30.

Abstract

Room temperature hydrogen sensors were fabricated from Au embedded ZnO nano-networks using a 30 mW GaN ultraviolet LED. The Au-decorated ZnO nano-networks were deposited on a SiO/Si substrate by a chemical vapour deposition process. X-ray diffraction (XRD) spectrum analysis revealed a hexagonal wurtzite structure of ZnO and presence of Au. The ZnO nanoparticles were interconnected, forming nano-network structures. Au nanoparticles were uniformly distributed on ZnO surfaces, as confirmed by FESEM imaging. Interdigitated electrodes (IDEs) were fabricated on the ZnO nano-networks using optical lithography. Sensor performances were measured with and without UV illumination, at room temperate, with concentrations of hydrogen varying from 5 ppm to 1%. The sensor response was found to be ∼21.5% under UV illumination and 0% without UV at room temperature for low hydrogen concentration of 5 ppm. The UV-photoactivated mode enhanced the adsorption of photo-induced O and O ions, and the d-band electron transition from the Au nanoparticles to ZnO-which increased the chemisorbed reaction between hydrogen and oxygen. The sensor response was also measured at 150 °C (without UV illumination) and found to be ∼18% at 5 ppm. Energy efficient low cost hydrogen sensors can be designed and fabricated with the combination of GaN UV LEDs and ZnO nanostructures.

摘要

采用 30 mW 的 GaN 紫外发光二极管,从嵌入金的 ZnO 纳米网络制备出了室温氢气传感器。金修饰的 ZnO 纳米网络是通过化学气相沉积工艺沉积在 SiO2/Si 衬底上的。X 射线衍射(XRD)光谱分析表明 ZnO 具有六方纤锌矿结构和金的存在。通过 FESEM 成像证实,ZnO 纳米颗粒相互连接,形成纳米网络结构。金纳米颗粒均匀分布在 ZnO 表面。使用光学光刻在 ZnO 纳米网络上制造了叉指电极(IDE)。在室温下,在氢气浓度从 5 ppm 变化到 1%的情况下,测量了有无紫外光照射时的传感器性能。在室温下,对于低浓度的 5 ppm 氢气,在紫外光照射下传感器的响应约为 21.5%,而没有紫外光时为 0%。紫外光光激活模式增强了光诱导 O 和 O 离子的吸附,以及 Au 纳米颗粒到 ZnO 的 d 带电子跃迁,从而增加了氢气和氧气之间的化学吸附反应。还在 150°C(无紫外光照射)下测量了传感器响应,在 5 ppm 时约为 18%。通过 GaN 紫外发光二极管和 ZnO 纳米结构的组合,可以设计和制造出具有能量效率和低成本的氢气传感器。

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