Sun Mingzi, Huang Bolong
Department of Applied Biology and Chemical Technology, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong SAR, China.
Inorg Chem. 2017 Jul 17;56(14):7975-7984. doi: 10.1021/acs.inorgchem.7b00683. Epub 2017 Jul 6.
The excellent ion conductivities of pyrochlore-type materials are believed to be based on oxygen anion transportations caused by the intrinsic defects, in which the anion Frenkel (a-Fr) pair (V+I) defect is the most stable one that lacks detailed study. The partially disordered pyrochlore with formation of the a-Fr pair defect will result in more disorder in local pyrochlore structure and increase number of possible migration paths for oxygen anions, which could further improve the ion conductivities of materials. Hence, we studied the formation of a-Fr defect pairs in LaHfO as a representative pyrochlore structure by density functional theory (DFT) calculations. Three types of defect migration sites were discovered with the ability to incorporate interstitial oxygen atoms from 48f sites and form a-Fr defect pairs (I+V). Besides the most stable vacant 8a sites with lowest defect formation energy of 3.49 eV/pair, two other novel migration sites have been first reported with ability to form a-Fr pair defect with formation energies of 6.53 and 8.49 eV/pair, respectively. These two new types of migration path, as intermediate sites, could construct a diffuse channel with vacant 8a site for interstitial oxygen anions diffusion in the lattice and significantly decrease the distance and barrier of each jump for oxygen atoms. In contrast with the oxygen interstitial defects, the formation of a-Fr pair defect shows higher priority because of much lower formation energies. Since oxygen anions could be easier to generate and diffuse in the pyrochlore structure, the a-Fr pair defect can be explained as the origin of excellent ion conductivities of pyrochlore materials. This work provides a detailed understanding of relationship between intrinsic defects and electronic properties, which enable us to predict electronic properties of other pyrochlore-type materials in the future study.
烧绿石型材料优异的离子电导率被认为是基于由本征缺陷引起的氧阴离子传输,其中阴离子弗伦克尔(a-Fr)对(V+I)缺陷是最稳定的一种,但缺乏详细研究。形成a-Fr对缺陷的部分无序烧绿石会导致局部烧绿石结构更加无序,并增加氧阴离子可能的迁移路径数量,这可以进一步提高材料的离子电导率。因此,我们通过密度泛函理论(DFT)计算研究了作为典型烧绿石结构的LaHfO中a-Fr缺陷对的形成。发现了三种类型的缺陷迁移位点,它们能够从48f位点吸收间隙氧原子并形成a-Fr缺陷对(I+V)。除了最稳定的空位8a位点,其缺陷形成能最低,为3.49 eV/对,还首次报道了另外两个新型迁移位点,它们形成a-Fr对缺陷的形成能分别为6.53和8.49 eV/对。这两种新型迁移路径作为中间位点,可以与空位8a位点构建一个扩散通道,用于间隙氧阴离子在晶格中的扩散,并显著降低氧原子每次跳跃的距离和势垒。与氧间隙缺陷相比,a-Fr对缺陷的形成具有更高的优先级,因为其形成能低得多。由于氧阴离子在烧绿石结构中更容易产生和扩散,a-Fr对缺陷可以被解释为烧绿石材料优异离子电导率的起源。这项工作提供了对本征缺陷与电子性质之间关系的详细理解,这使我们能够在未来的研究中预测其他烧绿石型材料的电子性质。