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Cl + CHI反应复杂势能面的基准从头算表征

Benchmark ab Initio Characterization of the Complex Potential Energy Surface of the Cl + CHI Reaction.

作者信息

Szabó István, Czakó Gábor

机构信息

Department of Physical Chemistry and Materials Science, Institute of Chemistry, University of Szeged , Rerrich Béla tér 1, Szeged H-6720, Hungary.

出版信息

J Phys Chem A. 2017 Aug 3;121(30):5748-5757. doi: 10.1021/acs.jpca.7b05503. Epub 2017 Jul 24.

Abstract

Benchmark stationary-point structures, vibrational frequencies, and classical/adiabatic relative energies (kcal/mol) are reported for the Cl + CHI reaction along the back-side attack (ΔE = -5.48/-5.54) inversion, front-side attack (ΔE = 36.73/35.89) and double-inversion (ΔE = 46.97/42.55) retention S2 pathways, the proton-transfer channel, and the hydride-substitution reaction path. The structures and frequencies are obtained by the frozen-core CCSD(T), CCSD(T)-F12a, and CCSD(T)-F12b methods with the aug-cc-pVnZ [n = D, T, and Q for structures and n = D and T for frequencies] basis sets and all-electron CCSD(T) with aug-cc-pwCVnZ [n = D and T for structures and n = D for frequencies]. The benchmark relative energies are determined using the focal-point analysis approach based on electron correlation methods up to CCSDT(Q), extrapolations to the complete basis set limits using aug-cc-pVnZ [n = 2(D), 3(T), 4(Q), and 5] bases, core correlation contributions obtained at CCSD(T)/aug-cc-pwCVQZ, and, for the adiabatic energies, zero-point energy corrections at the CCSD(T)-F12b/aug-cc-pVTZ level of theory. We usually find significant method and modest basis dependence for the energies. The post-CCSD(T) and core correlation effects are often about 0.4 kcal/mol, but almost cancel each other. The explicitly correlated CCSD(T)-F12 methods are recommended for geometry and frequency computations as well as for energy computations if the basis set dependence is significant.

摘要

报告了沿背面进攻(ΔE = -5.48/-5.54)反转、正面进攻(ΔE = 36.73/35.89)和双反转(ΔE = 46.97/42.55)保留S2途径、质子转移通道和氢化物取代反应路径的Cl + CHI反应的基准驻点结构、振动频率和经典/绝热相对能量(千卡/摩尔)。结构和频率通过使用aug-cc-pVnZ [结构的n = D、T和Q,频率的n = D和T]基组的冻结核心CCSD(T)、CCSD(T)-F12a和CCSD(T)-F12b方法以及使用aug-cc-pwCVnZ [结构的n = D和T,频率的n = D]的全电子CCSD(T)获得。基准相对能量使用基于电子相关方法直至CCSDT(Q)的焦点分析方法确定,使用aug-cc-pVnZ [n = 2(D)、3(T)、4(Q)和5]基组外推到完整基组极限,在CCSD(T)/aug-cc-pwCVQZ获得核心相关贡献,并且对于绝热能量,在CCSD(T)-F12b/aug-cc-pVTZ理论水平进行零点能量校正。我们通常发现能量存在显著的方法依赖性和适度的基组依赖性。后CCSD(T)和核心相关效应通常约为0.4千卡/摩尔,但几乎相互抵消。如果基组依赖性显著,建议使用显式相关的CCSD(T)-F12方法进行几何结构和频率计算以及能量计算。

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