Materials Science Centre, Indian Institute of Technology, Kharagpur, 721302, India.
Nanotechnology. 2017 Sep 20;28(38):385202. doi: 10.1088/1361-6528/aa7f19. Epub 2017 Jul 11.
Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In Ga As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.
制造下一代智能纳米电子集成电路将离不开纳米级电源单元。为了将纳米电子器件与片上电源单元集成，需要在 Si 平台上制造纳米级整流器电路。在本研究中，通过金属有机化学气相沉积技术制造了一种基于单个独立的 InGaAs 纳米线/ p-Si（111）异质结的纳米整流二极管。纳米异质结二极管表现出良好的整流和快速开关特性。通过对不同标准的正弦波、方波、锯齿波和三角波进行测试，展示了纳米异质结的整流特性，测试频率分别为 1 Hz 和 0.1 Hz。在所有波响应中观察到大约 150 ms 的反向恢复时间。用这个纳米异质结二极管组装了一个带有简单电容滤波器的半波整流电路，其输出效率为 12%。研究了载流子通过异质结的输运情况。还确定了纳米异质结的界面态密度。输出波形与输入波形不一致是由于二极管的串联电阻较高所致，进一步考虑结的 p 侧和 n 侧的尺寸，可以对此进行解释。在 1.7 V 偏压后理想因子的突然变化归因于空间电荷区中通过界面态的复合。低界面态密度和高整流比使这种异质结二极管成为未来纳米电子学的有前途的候选者。
