基于溶液法制备的具有高且平衡载流子迁移率的八萘氧基取代三（酞菁）铕半导体的空气稳定双极性场效应晶体管。
Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities.
作者信息
Kong Xia, Zhang Xia, Gao Dameng, Qi Dongdong, Chen Yanli, Jiang Jianzhuang
机构信息
Shandong Provincial Key Laboratory of Fluorine Chemistry and Chemical Materials , School of Chemistry and Chemical Engineering , University of Jinan , Jinan 250022 , China . Email:
Beijing Key Laboratory for Science and Application of Functional Molecular and Crystalline Materials , Department of Chemistry , University of Science and Technology Beijing , Beijing 100083 , China . Email:
出版信息
Chem Sci. 2015 Mar 1;6(3):1967-1972. doi: 10.1039/c4sc03492a. Epub 2014 Dec 10.
Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)]Eu[Pc(ONh)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm V s for holes and electrons, respectively, under ambient conditions.
在由（Pc）Eu[Pc(ONh)]Eu[Pc(ONh)]制备的基于QLS薄膜的有机场效应晶体管（OFET）器件上进行简单的溶剂蒸汽退火处理，可实现高且平衡的双极性性能，这在基于小分子单组分的溶液处理器件中从未观察到，在环境条件下，空穴和电子的迁移率分别为1.71 cm² V⁻¹ s⁻¹和1.25 cm² V⁻¹ s⁻¹。
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