Department of Physics and Oxide Research Centre, Hankuk University of Foreign Studies, Yongin 449-791, Republic of Korea.
Department of Material Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul 151-747, Republic of Korea.
Nanoscale. 2017 Jul 27;9(29):10502-10510. doi: 10.1039/c7nr04011c.
An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO thin films along the SrTiO [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.
基于氧化物的电阻式存储器作为硅基闪存的替代品具有很大的优势，因为它符合未来存储设备的新兴规格。传统电阻式存储器设备的关键开关参数的不均匀性和低耐久性阻碍了其实际应用。在这里，通过调整外延棕锰矿 SrFeO 薄膜沿 SrTiO[111]方向的生长方向，揭示了一种克服上述挑战的新策略，使得氧空位通道可以直接连接顶部和底部电极。受控氧空位通道有助于减少导电线（CF）的随机性。结果表明，该器件具有超过 10 个循环的高耐久性和 10ns 左右的短开关时间。此外，该器件在器件之间和器件内部的关键开关参数上表现出非常高的均匀性。这项工作通过控制功能氧化物层的原子结构，为提高纳米级器件性能提供了一个可行的范例。
