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由于位错相互作用导致的与马蒂森法则的振荡偏差。

Oscillatory deviations from Matthiessen's rule due to interacting dislocations.

作者信息

Fu Chu-Liang, Li Mingda

机构信息

School of Mathematics and Statistics, Yunnan University, Kunming 650500, People's Republic of China.

出版信息

J Phys Condens Matter. 2017 Aug 16;29(32):325702. doi: 10.1088/1361-648X/aa7955. Epub 2017 Jul 14.

Abstract

We theoretically examine the validity of Matthiessen's rule caused by strong dislocation-dislocation interaction using a fully quantized dislocation field, where its degree of deviation is quantified at arbitrary electron energy, dislocation-electron and dislocation-dislocation distances and interaction strengths. Contrary to intuition, we show that the electron relaxation rate deviates from the Matthiessen's rule in an oscillatory way as a function of inter-dislocation distance, instead of monotonically. In addition, we show quantitatively that the deviation is larger in a material with lower mass density, higher Poisson ratio and higher elastic moduli. This study could serve as a computational tool to investigate the electronic behavior of a highly-dislocated system at a full quantum field theoretical level.

摘要

我们使用完全量子化的位错场从理论上研究了由强位错-位错相互作用导致的马蒂森规则的有效性,其中其偏差程度在任意电子能量、位错-电子和位错-位错距离以及相互作用强度下进行量化。与直觉相反,我们表明电子弛豫率作为位错间距的函数以振荡方式偏离马蒂森规则,而不是单调地偏离。此外,我们定量表明,在质量密度较低、泊松比和弹性模量较高的材料中,偏差更大。这项研究可以作为一种计算工具,在全量子场理论水平上研究高度位错系统的电子行为。

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