Physics/Faculty of Science and Engineering, and Center for Functional Materials, Åbo Akademi University, Porthansgatan 3, 20500, Turku, Finland.
Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute für Angewandte Physik, Technische Universität Dresden, Nöthnitzer Straße 61, 01187, Dresden, Germany.
Sci Rep. 2017 Jul 14;7(1):5397. doi: 10.1038/s41598-017-05499-3.
A method to determine the doping induced charge carrier profiles in lightly and moderately doped organic semiconductor thin films is presented. The theory of the method of Charge Extraction by a Linearly Increasing Voltage technique in the doping-induced capacitive regime (doping-CELIV) is extended to the case with non-uniform doping profiles and the analytical description is verified with drift-diffusion simulations. The method is demonstrated experimentally on evaporated organic small-molecule thin films with a controlled doping profile, and solution-processed thin films where the non-uniform doping profile is unintentional, probably induced during the deposition process, and a priori unknown. Furthermore, the method offers a possibility of directly probing charge-density distributions at interfaces between highly doped and lightly doped or undoped layers.
提出了一种确定轻度和中度掺杂有机半导体薄膜中掺杂诱导电荷载流子分布的方法。扩展了在掺杂电容区（掺杂-CELIV）中通过线性增加电压技术进行电荷提取的方法的理论，以适应非均匀掺杂分布的情况，并通过漂移-扩散模拟验证了分析描述。该方法在具有受控掺杂分布的蒸发有机小分子薄膜和非均匀掺杂分布的溶液处理薄膜上进行了实验验证，这种非均匀掺杂分布可能是在沉积过程中无意引入的，而且事先是未知的。此外，该方法还提供了一种直接探测高掺杂和轻掺杂或未掺杂层之间界面处电荷密度分布的可能性。
