College of Science, China University of Petroleum , Qingdao, Shandong 266580, P. R. China.
Department of Physics and Materials Science, City University of Hong Kong , Hong Kong SAR, P. R. China.
ACS Appl Mater Interfaces. 2017 Aug 9;9(31):26107-26117. doi: 10.1021/acsami.7b07945. Epub 2017 Jul 31.
Surface modification by metal doping is an effective treatment technique for improving surface properties for CO reduction. Herein, the effects of doped Pd, Ru, and Cu on the adsorption, activation, and reduction selectivity of CO on CeO(111) were investigated by periodic density functional theory. The doped metals distorted the configuration of a perfect CeO(111) by weakening the adjacent Ce-O bond strength, and Pd doping was beneficial for generating a highly active O vacancy. The analyses of adsorption energy, charge density difference, and density of states confirmed that the doped metals were conducive for enhancing CO adsorption, especially for Cu/CeO(111). The initial reductive dissociation CO → CO* + O* on metal-doped CeO(111) followed the sequence of Cu- > perfect > Pd- > Ru-doped CeO(111); the reductive hydrogenation CO + H → COOH* followed the sequence of Cu- > perfect > Ru- > Pd-doped CeO(111), in which the most competitive route on Cu/CeO(111) was exothermic by 0.52 eV with an energy barrier of 0.16 eV; the reductive hydrogenation CO + H → HCOO* followed the sequence of Ru- > perfect > Pd-doped CeO(111). Energy barrier decomposition analyses were performed to identify the governing factors of bond activation and scission along the initial CO reduction routes. Results of this study provided deep insights into the effect of surface modification on the initial reduction mechanisms of CO on metal-doped CeO(111) surfaces.
通过金属掺杂进行表面改性是改善 CO 还原表面性能的有效处理技术。本文通过周期性密度泛函理论研究了掺杂 Pd、Ru 和 Cu 对 CeO(111)表面 CO 吸附、活化和还原选择性的影响。掺杂金属通过削弱相邻 Ce-O 键的强度来改变完美 CeO(111)的构型,并且 Pd 掺杂有利于产生高活性的 O 空位。吸附能、电荷密度差和态密度的分析证实,掺杂金属有利于增强 CO 的吸附,特别是对于 Cu/CeO(111)。金属掺杂 CeO(111)上初始还原解离 CO → CO* + O的顺序为 Cu->完美->Pd->Ru-掺杂 CeO(111);CO + H → COOH的还原氢化遵循 Cu->完美->Ru->Pd-掺杂 CeO(111)的顺序,其中 Cu/CeO(111)上最具竞争力的路径放热 0.52 eV,能垒为 0.16 eV;CO + H → HCOO*的还原氢化遵循 Ru->完美->Pd-掺杂 CeO(111)的顺序。进行了键活化和断裂的能垒分解分析,以确定沿初始 CO 还原途径的键活化和断裂的控制因素。这项研究的结果深入了解了表面改性对金属掺杂 CeO(111)表面 CO 初始还原机制的影响。