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卤代亲电试剂的电子转移反应:卤键本质的另一种观察角度。

Electron-transfer reactions of halogenated electrophiles: a different look into the nature of halogen bonding.

机构信息

Ball State University, Muncie, IN, USA.

出版信息

Faraday Discuss. 2017 Oct 13;203:315-332. doi: 10.1039/c7fd00074j.

Abstract

The rates of oxidation of ferrocene derivatives by brominated molecules R-Br (CBrCN, CBr, CBrNO, CBrCOCBr, CBrCONH, CBrF, and CBrH) were consistent with the predictions of the outer-sphere dissociative electron-transfer theory. The similar redox-reactions of the R-Br electrophiles with the typical halogen-bond acceptors tetramethyl-p-phenylenediamine (TMPD) or iodide were much faster than calculated using the same model. The fast redox-processes in these systems were related to the involvement of the transient halogen-bonded [R-Br, TMPD] or [R-Br, I] complexes in which barriers for electron transfer were lowered by the strong electronic coupling of reactants. The Mulliken-Hush treatment of the spectral and structural characteristics of the [R-Br, TMPD] or [R-Br, I] complexes corroborated the values of coupling elements, H, of 0.2-0.5 eV implied by the kinetic data. The Natural Bond Orbital analysis of these complexes indicated a noticeable donor/acceptor charge transfer, Δq, of 0.03-0.09 ē. The H and Δq values in the [R-Br, TMPD] and [R-Br, I] complexes (which are similar to those in the traditional charge-transfer associates) indicate significant contribution of charge-transfer (weakly-covalent) interaction to halogen bonding. The decrease of the barrier for electron transfer between the halogen-bonded reactants demonstrated in the current work points out that halogen bonding should be taken into account in the mechanistic analysis of the reactions of halogenated species.

摘要

偕二茂铁衍生物被溴化分子 R-Br(CBrCN、CBr、CBrNO、CBrCOCBr、CBrCONH、CBrF 和 CBrH)氧化的速率与外层分散电子转移理论的预测一致。R-Br 亲电试剂与典型卤键受体四甲基对苯二胺(TMPD)或碘的类似氧化还原反应比使用相同模型计算的反应快得多。这些体系中快速的氧化还原过程与瞬态卤键合 [R-Br,TMPD] 或 [R-Br,I] 复合物的参与有关,其中电子转移的势垒通过反应物的强电子耦合降低。[R-Br,TMPD] 或 [R-Br,I] 复合物的光谱和结构特征的 Mulliken-Hush 处理证实了动力学数据所暗示的耦合元素 H 的值为 0.2-0.5 eV。这些复合物的自然键轨道分析表明存在显著的供体/受体电荷转移,Δq 值为 0.03-0.09 ē。[R-Br,TMPD] 和 [R-Br,I] 复合物中的 H 和 Δq 值(与传统电荷转移配合物中的值相似)表明电荷转移(弱共价)相互作用对卤键合有显著贡献。在当前工作中证明的卤键反应物之间电子转移势垒的降低指出,在卤代物种反应的机理分析中应考虑卤键合。

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