反铁磁体-铁磁体界面上的Dzyaloshinskii-Moriya相互作用。

Dzyaloshinskii-Moriya Interaction across an Antiferromagnet-Ferromagnet Interface.

作者信息

Ma Xin, Yu Guoqiang, Razavi Seyed A, Sasaki Stephen S, Li Xiang, Hao Kai, Tolbert Sarah H, Wang Kang L, Li Xiaoqin

机构信息

Department of Physics, Center for Quantum systems, The University of Texas at Austin, Austin, Texas 78712, USA.

Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA.

出版信息

Phys Rev Lett. 2017 Jul 14;119(2):027202. doi: 10.1103/PhysRevLett.119.027202.

DOI:10.1103/PhysRevLett.119.027202

PMID:28753324

Abstract

The antiferromagnet- (AFM-)ferromagnet (FM) interfaces are of central importance in recently developed pure electric or ultrafast control of FM spins, where the underlying mechanisms remain unresolved. Here we report the direct observation of an Dzyaloshinskii-Moriya interaction (DMI) across the AFM-FM interface of IrMn/CoFeB thin films. The interfacial DMI is quantitatively measured from the asymmetric spin-wave dispersion in the FM layer using Brillouin light scattering. The DMI strength is enhanced by a factor of 7 with increasing IrMn layer thickness in the range of 1-7.5 nm. Our findings provide deeper insight into the coupling at the AFM-FM interface and may stimulate new device concepts utilizing chiral spin textures such as magnetic Skyrmions in AFM-FM heterostructures.

摘要

反铁磁体（AFM）-铁磁体（FM）界面在最近开发的纯电或超快控制FM自旋中至关重要，但其潜在机制仍未得到解决。在此，我们报告了在IrMn/CoFeB薄膜的AFM-FM界面上对Dzyaloshinskii-Moriya相互作用（DMI）的直接观察。利用布里渊光散射从FM层中的不对称自旋波色散定量测量界面DMI。在1-7.5纳米范围内，随着IrMn层厚度的增加，DMI强度提高了7倍。我们的研究结果为AFM-FM界面处的耦合提供了更深入的见解，并可能激发利用手性自旋纹理（如AFM-FM异质结构中的磁性斯格明子）的新器件概念。